STMicroelectronics_STD17NF25

STMicroelectronics
STD17NF25  
Single FETs, MOSFETs

STMicroelectronics
STD17NF25
278-STD17NF25
Ersa
STMicroelectronics-STD17NF25-datasheets-95940.pdf
MOSFET N-CH 250V 17A DPAK
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    STD17NF25 Description

    STD17NF25 Description

    The STD17NF25 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high efficiency and power handling. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 17A at 25°C, this device is well-suited for a variety of power electronic applications. The STD17NF25 features a low on-resistance (Rds On) of 165mOhm at 8.5A and 10V, ensuring minimal power loss and high efficiency. The device is available in a DPAK package, making it ideal for surface-mount applications.

    STD17NF25 Features

    • Low On-Resistance (Rds On): The STD17NF25 boasts a low on-resistance of 165mOhm at 8.5A and 10V, which contributes to its high efficiency and power handling capabilities.
    • High Drain-to-Source Voltage (Vdss): With a Vdss of 250V, this MOSFET can handle high voltage applications, making it suitable for a wide range of power electronic devices.
    • High Continuous Drain Current (Id): The STD17NF25 can handle a continuous drain current of 17A at 25°C, making it ideal for applications requiring high current handling.
    • Low Gate Charge (Qg): The device has a low gate charge of 29.5nC at 10V, which contributes to its fast switching capabilities and reduced power loss.
    • Low Input Capacitance (Ciss): The STD17NF25 has a low input capacitance of 1000pF at 25V, which helps to minimize power loss and improve switching performance.
    • Robust Package: The DPAK package provides excellent thermal performance and mechanical robustness, making it suitable for demanding power electronic applications.

    STD17NF25 Applications

    The STD17NF25 is ideal for a variety of power electronic applications, including:

    • Power Supplies: Due to its high voltage and current handling capabilities, the STD17NF25 is well-suited for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
    • Motor Control: The device's low on-resistance and high current handling capabilities make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
    • Automotive Applications: The STD17NF25 can be used in various automotive applications, such as electric power steering, battery management systems, and electric vehicle charging systems.
    • Industrial Control: The device's robustness and high performance make it suitable for industrial control applications, including motor drives and power distribution systems.

    Conclusion of STD17NF25

    The STD17NF25 is a high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching performance. Its unique features, such as low gate charge and input capacitance, contribute to its high efficiency and power handling capabilities. The device's robust DPAK package makes it ideal for a variety of power electronic applications, including power supplies, motor control, automotive systems, and industrial control. With its excellent performance and reliability, the STD17NF25 is a top choice for demanding power electronic applications.

    Tech Specifications

    Unit Weight
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Fall Time
    Automotive
    RoHS
    Maximum IDSS (uA)
    Typical Turn-On Delay Time
    REACH Status
    Channel Type
    Maximum Continuous Drain Current (A)
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Supplier Temperature Grade
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Typical Reverse Recovery Charge (nC)
    Mounting
    Rise Time
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    Vgs th - Gate-Source Threshold Voltage
    Package
    Typical Reverse Recovery Time (ns)
    Qg - Gate Charge
    Power Dissipation (Max)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    Maximum Operating Temperature
    Width
    RoHS Status
    Typical Gate Threshold Voltage (V)
    SVHC Exceeds Threshold
    Transistor Polarity
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Typical Output Capacitance (pF)
    Tab
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Typical Rise Time (ns)
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Technology
    EU RoHS
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Vgs(th) (Max) @ Id
    Pin Count
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Typical Fall Time (ns)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Height
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Gate Plateau Voltage (V)
    Typical Turn-Off Delay Time
    Package Length
    Series
    Operating Junction Temperature (°C)
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD17NF25 Documents

    Download datasheets and manufacturer documentation for STD17NF25

    Ersa STx17NF25      
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    Ersa New Lead Frame Design 17/Mar/2023      

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