STMicroelectronics_STP13N80K5

STMicroelectronics
STP13N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP13N80K5
278-STP13N80K5
Ersa
STMicroelectronics-STP13N80K5-datasheets-10135171.pdf
MOSFET N-CH 800V 12A TO220
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STP13N80K5 Description

STP13N80K5 Description

The STP13N80K5 from STMicroelectronics is an N-channel 800V MOSFET belonging to the SuperMESH5™ series, designed for high-voltage switching applications. With a continuous drain current (Id) of 12A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 450mΩ at 10V gate drive, this device offers an optimal balance between efficiency and power handling. Its 800V drain-to-source voltage (Vdss) rating makes it suitable for demanding industrial and consumer power systems. Packaged in a TO-220 through-hole format, the STP13N80K5 ensures robust thermal performance, supporting a maximum power dissipation of 190W (Tc).

STP13N80K5 Features

  • High Voltage Rating: 800V Vdss ensures reliability in high-voltage circuits.
  • Low Gate Charge (Qg): 29nC @ 10V minimizes switching losses, improving efficiency in high-frequency applications.
  • Low Input Capacitance (Ciss): 870pF @ 100V reduces gate drive requirements.
  • SuperMESH5™ Technology: Enhances switching performance and reduces conduction losses.
  • Wide Gate-Source Voltage Range: ±30V Vgs(max) provides flexibility in drive circuitry.
  • Robust Thermal Performance: TO-220 package with high power dissipation capability.
  • Compliance: ROHS3 and REACH compliant, with MSL 1 (unlimited) moisture sensitivity for easy handling.

STP13N80K5 Applications

The STP13N80K5 is ideal for:

  • Switch-mode power supplies (SMPS) and AC-DC converters due to its high voltage and low Rds(on).
  • Industrial motor drives and inverters, where high efficiency and thermal stability are critical.
  • Lighting ballasts and electronic transformers, leveraging its fast switching characteristics.
  • Renewable energy systems, such as solar inverters, where high-voltage blocking capability is essential.

Conclusion of STP13N80K5

The STP13N80K5 stands out as a high-performance 800V MOSFET with low conduction losses, fast switching, and excellent thermal management. Its SuperMESH5™ technology and TO-220 package make it a reliable choice for power electronics designers seeking efficiency and durability in high-voltage applications. Whether in industrial power systems, renewable energy, or consumer electronics, this MOSFET delivers superior performance and compliance with environmental standards.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP13N80K5 Documents

Download datasheets and manufacturer documentation for STP13N80K5

Ersa ST(B,F,P,W)13N80K5      
Ersa ST(B,F,P,W)13N80K5      

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