STMicroelectronics

STB20N95K5

STB20N95K5 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for high voltage applications and offers high performance in terms of switching speed and efficiency.

Description:

The STB20N95K5 is a high voltage N-channel MOSFET transistor with a breakdown voltage (V(BR)) of 900V. It has a continuous drain current (I_D) of 20A and a gate-source voltage (V_GS) of ±20V. The transistor is available in a TO-220AB package.

Features:

1. High breakdown voltage (V(BR)) of 900V
2. Continuous drain current (I_D) of 20A
3. Gate-source voltage (V_GS) of ±20V
4. Low on-state resistance (RDS(on)) of 55mΩ (maximum)
5. Fast switching speed with a typical gate charge (Qg) of 44nC
6. High efficiency with low gate-source input capacitance (Ciss) of 3100pF (maximum)
7. Available in a TO-220AB package

Applications:

The STB20N95K5 is suitable for a wide range of high voltage applications, including:

1. Motor control and drive circuits
2. Power supplies and converters
3. Automotive electronics
4. Industrial control systems
5. Switch mode power supplies (SMPS)
6. Battery management systems
7. High voltage switching and protection circuits

In summary, the STB20N95K5 is a high voltage N-channel MOSFET transistor that offers high performance in terms of switching speed and efficiency. Its high breakdown voltage, low on-state resistance, and fast switching speed make it suitable for a wide range of high voltage applications.