STMicroelectronics_STB20N95K5

STMicroelectronics
STB20N95K5  
Single FETs, MOSFETs

STMicroelectronics
STB20N95K5
278-STB20N95K5
Ersa
STMicroelectronics-STB20N95K5-datasheets-5515018.pdf
MOSFET N-CH 950V 17.5A D2PAK
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    STB20N95K5 Description

    STB20N95K5 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for high voltage applications and offers high performance in terms of switching speed and efficiency.

    Description:

    The STB20N95K5 is a high voltage N-channel MOSFET transistor with a breakdown voltage (V(BR)) of 900V. It has a continuous drain current (I_D) of 20A and a gate-source voltage (V_GS) of ±20V. The transistor is available in a TO-220AB package.

    Features:

    1. High breakdown voltage (V(BR)) of 900V
    2. Continuous drain current (I_D) of 20A
    3. Gate-source voltage (V_GS) of ±20V
    4. Low on-state resistance (RDS(on)) of 55mΩ (maximum)
    5. Fast switching speed with a typical gate charge (Qg) of 44nC
    6. High efficiency with low gate-source input capacitance (Ciss) of 3100pF (maximum)
    7. Available in a TO-220AB package

    Applications:

    The STB20N95K5 is suitable for a wide range of high voltage applications, including:

    1. Motor control and drive circuits
    2. Power supplies and converters
    3. Automotive electronics
    4. Industrial control systems
    5. Switch mode power supplies (SMPS)
    6. Battery management systems
    7. High voltage switching and protection circuits

    In summary, the STB20N95K5 is a high voltage N-channel MOSFET transistor that offers high performance in terms of switching speed and efficiency. Its high breakdown voltage, low on-state resistance, and fast switching speed make it suitable for a wide range of high voltage applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    Typical Drain Source Resistance @ 25°C (mOhm)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Typical Gate Plateau Voltage (V)
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Tradename
    Transistor Type
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    STB20N95K5 Documents

    Download datasheets and manufacturer documentation for STB20N95K5

    Ersa IPD/15/9124 20/Mar/2015      
    Ersa STx20N95K5      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STB20N95K5 View All Specifications      
    Ersa STx20N95K5      
    Ersa D2PAK Lead Modification 04/Oct/2013      

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