STMicroelectronics_STB21N90K5

STMicroelectronics
STB21N90K5  
Single FETs, MOSFETs

STMicroelectronics
STB21N90K5
278-STB21N90K5
Ersa
STMicroelectronics-STB21N90K5-datasheets-12097254.pdf
MOSFET N-CH 900V 18.5A D2PAK
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STB21N90K5 Description

STB21N90K5 Description

The STB21N90K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current capabilities. This device features a SuperMESH5™ structure, which offers superior performance in terms of switching speed and efficiency. With a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 18.5A at 25°C, the STB21N90K5 is well-suited for demanding power electronics applications.

STB21N90K5 Features

  • High Voltage and Current Ratings: The STB21N90K5 boasts a drain-to-source voltage (Vdss) of 900V and a continuous drain current (Id) of 18.5A at 25°C, making it ideal for high-power applications.
  • Superior Switching Performance: The SuperMESH5™ structure enables fast switching speeds and low on-resistance, resulting in improved efficiency and reduced power dissipation.
  • Low On-Resistance: The STB21N90K5 has a maximum on-resistance (Rds On) of 299mOhm at 9A and 10V, contributing to lower power losses.
  • Robust Gate Drive: With a maximum gate-source voltage (Vgs) of ±30V, the device can handle a wide range of gate drive conditions.
  • Compliance and Environmental: The STB21N90K5 is compliant with RoHS3 and REACH regulations, making it suitable for environmentally conscious designs.

STB21N90K5 Applications

The STB21N90K5's high voltage and current capabilities make it an excellent choice for a variety of power electronics applications, including:

  • Power Supplies: Ideal for high-voltage power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: Suitable for electric motor control applications, where high voltage and current ratings are required.
  • Industrial Automation: The STB21N90K5 can be used in industrial automation systems, such as robotics and conveyor systems, where high power and reliability are essential.
  • Renewable Energy: This MOSFET is well-suited for renewable energy applications, such as solar inverters and wind power systems, where high voltage and current ratings are necessary.

Conclusion of STB21N90K5

The STB21N90K5 from STMicroelectronics is a high-performance N-Channel MOSFET that offers superior switching performance, high voltage and current ratings, and compliance with environmental regulations. Its unique SuperMESH5™ structure enables fast switching speeds and low on-resistance, making it an ideal choice for demanding power electronics applications. With its robust gate drive and wide range of applications, the STB21N90K5 is a reliable and efficient solution for high-power designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STB21N90K5 Documents

Download datasheets and manufacturer documentation for STB21N90K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STx21N90K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB21N90K5 View All Specifications      
Ersa STx21N90K5      
Ersa D2PAK Lead Modification 04/Oct/2013      

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