STMicroelectronics_STP25N80K5

STMicroelectronics
STP25N80K5  
Single FETs, MOSFETs

STMicroelectronics
STP25N80K5
278-STP25N80K5
Ersa
STMicroelectronics-STP25N80K5-datasheets-223288.pdf
MOSFET N-CH 800V 19.5A TO220
In Stock : 776

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STP25N80K5 Description

STP25N80K5 Description

The STP25N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics. It is designed for applications requiring high voltage and current handling capabilities. The device is built on STMicroelectronics' SuperMESH5™ technology, which offers superior performance and reliability. The STP25N80K5 features a drain-to-source voltage (Vdss) of 800V and can handle continuous drain current (Id) of up to 19.5A at 25°C. It has a low on-resistance (Rds On) of 260mOhm at 19.5A and 10V Vgs, ensuring high efficiency and low power dissipation.

STP25N80K5 Features

  • High Voltage and Current Handling: With a Vdss of 800V and Id of 19.5A, the STP25N80K5 is ideal for high-power applications.
  • Low On-Resistance: The low Rds On of 260mOhm at 19.5A and 10V Vgs ensures high efficiency and low power dissipation.
  • SuperMESH5™ Technology: STMicroelectronics' advanced technology provides superior performance and reliability.
  • Wide Operating Voltage Range: The device can operate with a gate-source voltage (Vgs) ranging from -30V to +30V.
  • Robust Package: The STP25N80K5 is available in a robust TO220 package, suitable for various applications.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety.

STP25N80K5 Applications

The STP25N80K5 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, the STP25N80K5 is suitable for power electronics applications such as power supplies, motor drives, and inverters.
  2. Industrial Control: The device can be used in industrial control systems, where high voltage and current handling capabilities are required.
  3. Automotive Applications: The STP25N80K5 is suitable for automotive applications such as electric vehicle charging systems, battery management systems, and powertrain control.
  4. Renewable Energy: The device can be used in renewable energy systems, such as solar inverters and wind power converters, where high voltage and current ratings are essential.

Conclusion of STP25N80K5

The STP25N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, offering superior performance and reliability for high-power applications. Its high voltage and current handling capabilities, low on-resistance, and advanced SuperMESH5™ technology make it an ideal choice for power electronics, industrial control, automotive, and renewable energy applications. With its environmental compliance and robust package, the STP25N80K5 is a reliable and efficient solution for demanding applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Transistor Type
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STP25N80K5 Documents

Download datasheets and manufacturer documentation for STP25N80K5

Ersa STx25N80K5      
Ersa STP25N80K5 View All Specifications      
Ersa STx25N80K5      

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