


STMicroelectronics
STU7N80K5
278-STU7N80K5
PDF Datasheet
800V 6A N-CH MOSFET, 0.95 Ohm, IPAK, TO-251
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Responsible qualityTech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
800V
Fall Time
20.2ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
STU7N80K5 Description
N-Channel 800 V 6A (Tc) 110W (Tc) Through Hole TO-251 (IPAK)
FAQ
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