STMicroelectronics_STU8N80K5

STMicroelectronics
STU8N80K5  
Single FETs, MOSFETs

STMicroelectronics
STU8N80K5
278-STU8N80K5
Ersa
STMicroelectronics-STU8N80K5-datasheets-11884123.pdf
MOSFET N-CH 800V 6A TO251
In Stock : 2678

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STU8N80K5 Description

STU8N80K5 Description

The STU8N80K5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power management. It boasts an 800V drain-to-source voltage (Vdss) and can handle a continuous drain current of 6A at 25°C. With a maximum power dissipation of 110W at Tc, this device is well-suited for high-power applications. Its SuperMESH5™ series ensures excellent thermal performance and reliability.

STU8N80K5 Features

  • High Voltage Tolerance: The STU8N80K5 can withstand up to 800V, making it ideal for high-voltage applications.
  • Robust Current Handling: Capable of handling 6A continuous drain current, it is suitable for power-intensive tasks.
  • Low On-Resistance: With a maximum Rds On of 950mOhm at 3A and 10V, it minimizes power loss and operates efficiently.
  • Gate Charge Optimization: A maximum gate charge (Qg) of 16.5nC at 10V ensures fast switching and reduced power consumption.
  • Environmental Compliance: It is REACH unaffected and RoHS3 compliant, adhering to strict environmental standards.
  • Moisture Sensitivity Level (MSL): Rated at level 1, it has unlimited storage time before reflow soldering, enhancing its reliability in various environments.

STU8N80K5 Applications

The STU8N80K5 is particularly well-suited for applications where high voltage and current handling are critical:

  • Industrial Automation: Its high voltage and current ratings make it ideal for motor drives and power control in industrial settings.
  • Power Supplies: It can be used in power supply designs, particularly in high-voltage DC-DC converters.
  • Electric Vehicles: Its robust specifications make it suitable for electric vehicle charging systems and power management.
  • Renewable Energy: It can be employed in solar inverters and wind turbine power electronics due to its high voltage and power capabilities.

Conclusion of STU8N80K5

The STU8N80K5 stands out for its high voltage and current ratings, low on-resistance, and compliance with environmental standards. Its unique features, such as the SuperMESH5™ series design, contribute to its superior thermal management and reliability. This MOSFET is an excellent choice for demanding applications in industrial automation, power supplies, electric vehicles, and renewable energy systems where performance and durability are paramount.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STU8N80K5 Documents

Download datasheets and manufacturer documentation for STU8N80K5

Ersa Assembly Site 22/Nov/2022      
Ersa STP8N80K5, STU8N80K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STU8N80K5 View All Specifications      
Ersa Mult Dev Reinstate 6/Aug/2020       Mult Dev OBS 3/Jul/2020      
Ersa STP8N80K5, STU8N80K5      

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