STMicroelectronics_STWA20N95K5

STMicroelectronics
STWA20N95K5  
Single FETs, MOSFETs

STMicroelectronics
STWA20N95K5
278-STWA20N95K5
Ersa
STMicroelectronics-STWA20N95K5-datasheets-12905229.pdf
MOSFET N-CH 950V 17.5A TO247
In Stock : 770

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STWA20N95K5 Description

STWA20N95K5 Description

The STWA20N95K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 950V drain-to-source voltage (Vdss) and 17.5A continuous drain current (Id), this device is optimized for efficiency and reliability in high-voltage circuits. It features SuperMESH5™ technology, which significantly reduces on-state resistance (Rds(on) of 330mΩ @ 9A, 10V) while maintaining low gate charge (Qg(max) of 40nC @ 10V). Packaged in a TO-247 through-hole format, it ensures robust thermal performance with a maximum power dissipation of 250W (Tc).

STWA20N95K5 Features

  • High Voltage Rating: 950V Vdss for industrial and automotive applications.
  • Low Rds(on): 330mΩ minimizes conduction losses, improving efficiency.
  • SuperMESH5™ Technology: Enhances switching performance and reduces energy losses.
  • Low Gate Charge (Qg): 40nC ensures faster switching speeds and lower drive requirements.
  • High Power Handling: 250W dissipation capability for thermally challenging environments.
  • Robust Construction: TO-247 package offers superior thermal management.
  • Compliance: ROHS3, REACH unaffected, and ECCN EAR99 certified for global use.

STWA20N95K5 Applications

This MOSFET is ideal for:

  • Switch-mode power supplies (SMPS) in industrial and telecom systems.
  • Motor drives and inverters requiring high-voltage switching.
  • Renewable energy systems, such as solar inverters and wind power converters.
  • Automotive applications, including EV charging and traction control.
  • High-voltage DC-DC converters where efficiency and reliability are critical.

Conclusion of STWA20N95K5

The STWA20N95K5 stands out as a high-efficiency, high-voltage MOSFET with SuperMESH5™ technology, making it a superior choice for power electronics. Its low Rds(on), high current capability, and robust thermal performance ensure reliability in demanding applications. Whether for industrial, automotive, or renewable energy systems, this device delivers optimal performance, reduced losses, and long-term durability. Its compliance with global standards further enhances its suitability for diverse markets.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STWA20N95K5 Documents

Download datasheets and manufacturer documentation for STWA20N95K5

Ersa IPD/15/9124 20/Mar/2015      
Ersa STWA20N95K5      
Ersa STWA20N95K5      

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