The STWA20N95K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. With a 950V drain-to-source voltage (Vdss) and 17.5A continuous drain current (Id), this device is optimized for efficiency and reliability in high-voltage circuits. It features SuperMESH5™ technology, which significantly reduces on-state resistance (Rds(on) of 330mΩ @ 9A, 10V) while maintaining low gate charge (Qg(max) of 40nC @ 10V). Packaged in a TO-247 through-hole format, it ensures robust thermal performance with a maximum power dissipation of 250W (Tc).
This MOSFET is ideal for:
The STWA20N95K5 stands out as a high-efficiency, high-voltage MOSFET with SuperMESH5™ technology, making it a superior choice for power electronics. Its low Rds(on), high current capability, and robust thermal performance ensure reliability in demanding applications. Whether for industrial, automotive, or renewable energy systems, this device delivers optimal performance, reduced losses, and long-term durability. Its compliance with global standards further enhances its suitability for diverse markets.
Download datasheets and manufacturer documentation for STWA20N95K5