STMicroelectronics_STD36P4LLF6

STMicroelectronics
STD36P4LLF6  
Single FETs, MOSFETs

STMicroelectronics
STD36P4LLF6
278-STD36P4LLF6
Ersa
STMicroelectronics-STD36P4LLF6-datasheets-250428.pdf
MOSFET P-CH 40V 36A DPAK
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STD36P4LLF6 Description

STD36P4LLF6 Description

The STD36P4LLF6 from STMicroelectronics is a high-performance P-channel power MOSFET designed for demanding switching applications. Part of the STripFET™ F6 series, it features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C, making it suitable for high-current applications. With an ultra-low on-resistance (Rds On) of 20.5mΩ at 10V gate drive, this MOSFET minimizes conduction losses, improving efficiency in power systems. Its DPAK (TO-252) package ensures robust thermal performance, supporting a maximum power dissipation of 60W (Tc) and an operating junction temperature up to 175°C.

STD36P4LLF6 Features

  • Low Gate Charge (Qg): 22nC at 4.5V ensures fast switching, reducing switching losses in high-frequency applications.
  • High Input Capacitance (Ciss): 2850pF at 25V provides stable gate control, enhancing noise immunity.
  • Wide Gate-Source Voltage (Vgs) Range: ±20V allows flexibility in drive circuitry design.
  • Optimized for 4.5V/10V Drive: Ideal for logic-level and standard gate drive applications.
  • Robust Construction: ROHS3 compliant and REACH unaffected, meeting stringent environmental standards.
  • Surface-Mount DPAK Package: Compact footprint with excellent thermal performance for space-constrained designs.

STD36P4LLF6 Applications

This MOSFET excels in power management systems, including:

  • DC-DC Converters: Efficient power conversion in industrial and automotive systems.
  • Motor Control: High-current switching in brushed/brushless motor drives.
  • Battery Management Systems (BMS): Protection circuits and load switching in portable electronics.
  • Power Supplies: Synchronous rectification and OR-ing in telecom/server PSUs.
  • Load Switching: Fast, low-loss switching in UPS and inverter applications.

Conclusion of STD36P4LLF6

The STD36P4LLF6 combines low Rds On, high current capability, and thermal resilience, making it a superior choice for power electronics designers. Its STripFET™ F6 technology ensures reliability in harsh environments, while the DPAK package balances performance and space efficiency. Whether for industrial automation, automotive systems, or consumer electronics, this MOSFET delivers efficiency, durability, and cost-effectiveness in high-power switching applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD36P4LLF6 Documents

Download datasheets and manufacturer documentation for STD36P4LLF6

Ersa STD36P4LLF6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD36P4LLF6      

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