The STD36P4LLF6 from STMicroelectronics is a high-performance P-channel power MOSFET designed for demanding switching applications. Part of the STripFET™ F6 series, it features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 36A at 25°C, making it suitable for high-current applications. With an ultra-low on-resistance (Rds On) of 20.5mΩ at 10V gate drive, this MOSFET minimizes conduction losses, improving efficiency in power systems. Its DPAK (TO-252) package ensures robust thermal performance, supporting a maximum power dissipation of 60W (Tc) and an operating junction temperature up to 175°C.
This MOSFET excels in power management systems, including:
The STD36P4LLF6 combines low Rds On, high current capability, and thermal resilience, making it a superior choice for power electronics designers. Its STripFET™ F6 technology ensures reliability in harsh environments, while the DPAK package balances performance and space efficiency. Whether for industrial automation, automotive systems, or consumer electronics, this MOSFET delivers efficiency, durability, and cost-effectiveness in high-power switching applications.
Download datasheets and manufacturer documentation for STD36P4LLF6