STMicroelectronics
STB6NM60N
278-STB6NM60N
PDF Datasheet
MOSFET N-CH 600V 4.6A D2PAK
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Tech Specifications
Package/Case
D2PAK
Continuous Drain Current (ID)
4.6A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
920mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
920mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
STB6NM60N Description
N-Channel 600 V 4.6A (Tc) 45W (Tc) Surface Mount D2PAK
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