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STMicroelectronics
STI11NM80
278-STI11NM80
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in I2PAK
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
800V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.63nF
STI11NM80 Description
N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
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STI11NM80 is currently available on an inquiry basis. Please contact us for the latest stock information.
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What operating temperature range does STI11NM80 support?
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