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STMicroelectronics
STI11NM80
278-STI11NM80
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in I2PAK
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Tech Specifications
Package / Case
TO-262-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
800V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.63nF
STI11NM80 Description
N-Channel 800 V 11A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
FAQ
What voltage specification is listed for STI11NM80?
The listed voltage-related specification for STI11NM80 is 800V.
What is the mounting type of STI11NM80?
What is STI11NM80?
Are there related or alternative parts for STI11NM80?
What operating temperature range does STI11NM80 support?
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