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STMicroelectronics
STP6NM60N
278-STP6NM60N
PDF Datasheet
600V 4.6A N-CH MOSFET TO-220 920mR
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Tech Specifications
Package/Case
TO-220
Continuous Drain Current (ID)
4.6A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
920mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
920mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
STP6NM60N Description
N-Channel 600 V 4.6A (Tc) 45W (Tc) Through Hole TO-220
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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