The STP24NM60N from STMicroelectronics is a high-performance N-channel 600V MOSFET designed for demanding power switching applications. Part of the MDmesh™ II series, it combines low on-resistance (190mΩ @ 8A, 10V) with high drain current capability (17A continuous @ 25°C), making it ideal for efficient power conversion. Its 600V drain-to-source voltage (Vdss) and ±30V gate-to-source voltage (Vgs) tolerance ensure robust operation in high-voltage environments. The device features a low gate charge (46nC @ 10V) and input capacitance (1400pF @ 50V), enabling fast switching and reduced switching losses. Packaged in a TO-220 through-hole format, it is suitable for industrial and consumer applications requiring high reliability.
The STP24NM60N stands out as a high-efficiency, high-voltage MOSFET with low conduction and switching losses, making it a superior choice for power electronics. Its MDmesh™ II technology ensures reliability in harsh environments, while its TO-220 package simplifies thermal management. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET delivers performance, durability, and compliance with global standards. Engineers seeking a cost-effective, high-performance solution for high-power applications will find the STP24NM60N an excellent fit.
Download datasheets and manufacturer documentation for STP24NM60N