STMicroelectronics_STP24NM60N

STMicroelectronics
STP24NM60N  
Single FETs, MOSFETs

STMicroelectronics
STP24NM60N
278-STP24NM60N
Ersa
STMicroelectronics-STP24NM60N-datasheets-9748948.pdf
MOSFET N-CH 600V 17A TO220
In Stock : 836

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STP24NM60N Description

STP24NM60N Description

The STP24NM60N from STMicroelectronics is a high-performance N-channel 600V MOSFET designed for demanding power switching applications. Part of the MDmesh™ II series, it combines low on-resistance (190mΩ @ 8A, 10V) with high drain current capability (17A continuous @ 25°C), making it ideal for efficient power conversion. Its 600V drain-to-source voltage (Vdss) and ±30V gate-to-source voltage (Vgs) tolerance ensure robust operation in high-voltage environments. The device features a low gate charge (46nC @ 10V) and input capacitance (1400pF @ 50V), enabling fast switching and reduced switching losses. Packaged in a TO-220 through-hole format, it is suitable for industrial and consumer applications requiring high reliability.

STP24NM60N Features

  • High Voltage & Current Rating: 600V Vdss and 17A continuous drain current (Tc).
  • Low Rds(on): 190mΩ @ 8A, 10V, minimizing conduction losses.
  • Fast Switching: Low gate charge (46nC) and input capacitance (1400pF) for efficient high-frequency operation.
  • Robust Design: ±30V Vgs tolerance and 125W max power dissipation (Tc) for durability.
  • Advanced Technology: MDmesh™ II structure optimizes switching performance and avalanche ruggedness.
  • Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and reliability assurance.

STP24NM60N Applications

  • Switched-Mode Power Supplies (SMPS): High-efficiency AC-DC and DC-DC converters.
  • Motor Drives: Inverters and H-bridge configurations for industrial and automotive systems.
  • Lighting Solutions: Ballasts and LED drivers requiring high-voltage switching.
  • Renewable Energy: Solar inverters and power conditioning units.
  • Industrial Automation: High-power switching in PLCs and motor controllers.

Conclusion of STP24NM60N

The STP24NM60N stands out as a high-efficiency, high-voltage MOSFET with low conduction and switching losses, making it a superior choice for power electronics. Its MDmesh™ II technology ensures reliability in harsh environments, while its TO-220 package simplifies thermal management. Ideal for SMPS, motor drives, and renewable energy systems, this MOSFET delivers performance, durability, and compliance with global standards. Engineers seeking a cost-effective, high-performance solution for high-power applications will find the STP24NM60N an excellent fit.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP24NM60N Documents

Download datasheets and manufacturer documentation for STP24NM60N

Ersa STx24NM60N      
Ersa STP24NM60N View All Specifications      
Ersa STx24NM60N      

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