STMicroelectronics_STL18N65M5

STMicroelectronics
STL18N65M5  
Single FETs, MOSFETs

STMicroelectronics
STL18N65M5
278-STL18N65M5
Ersa
STMicroelectronics-STL18N65M5-datasheets-3614525.pdf
MOSFET N-CH 650V 15A POWERFLAT
In Stock : 2661

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STL18N65M5 Description

STL18N65M5 Description

The STL18N65M5 is a high-performance MOSFET N-CH 650V 15A POWERFLAT from STMicroelectronics, designed for demanding applications in the electronics industry. This single FET features a robust design with a maximum drain-to-source voltage of 650V and a continuous drain current of 15A at 25°C. The device is manufactured using advanced MOSFET (Metal Oxide) technology, ensuring high efficiency and reliability.

STL18N65M5 Features

  • Input Capacitance (Ciss): 1240 pF @ 100 V, ensuring fast switching and reduced power loss.
  • Gate Charge (Qg): 31 nC @ 10 V, contributing to low power consumption and improved performance.
  • Rds On (Max): 240 mOhm @ 7.5A, 10V, providing low on-resistance for efficient current flow.
  • Vgs(th) (Max): 5V @ 250µA, ensuring stable operation across a wide range of input voltages.
  • Operating Temperature: 150°C (TJ), suitable for high-temperature applications.
  • Power Dissipation (Max): 57W (Tc), enabling the device to handle high power loads.
  • Mounting Type: Surface Mount, facilitating easy integration into various electronic systems.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring reliable performance in humid environments.
  • REACH Status: REACH Unaffected, complying with European regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.

STL18N65M5 Applications

The STL18N65M5 is ideal for a variety of applications where high voltage, current, and power handling are required. Some specific use cases include:

  1. Power Supplies: Due to its high voltage and current ratings, the STL18N65M5 is well-suited for power supply applications, such as switching power supplies and battery chargers.
  2. Industrial Automation: The device's robust design and high power dissipation make it suitable for motor control and industrial automation systems.
  3. Automotive Electronics: The STL18N65M5 can be used in automotive applications, such as electric vehicle charging systems and power management circuits.
  4. Renewable Energy: The device's high voltage and current capabilities make it suitable for solar power inverters and wind energy systems.

Conclusion of STL18N65M5

The STL18N65M5 from STMicroelectronics is a powerful and versatile MOSFET N-CH 650V 15A POWERFLAT, offering excellent performance and reliability in high-voltage and high-current applications. Its unique features, such as low on-resistance, high power dissipation, and compliance with environmental standards, make it an ideal choice for power supplies, industrial automation, automotive electronics, and renewable energy systems. With its advanced MOSFET technology and robust design, the STL18N65M5 is a reliable and efficient solution for demanding electronic applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL18N65M5 Documents

Download datasheets and manufacturer documentation for STL18N65M5

Ersa STL18N65M5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL18N65M5      

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