STMicroelectronics_STB6N80K5

STMicroelectronics
STB6N80K5  
Single FETs, MOSFETs

STMicroelectronics
STB6N80K5
278-STB6N80K5
Ersa
STMicroelectronics-STB6N80K5-datasheets-10807382.pdf
MOSFET N-CH 800V 4.5A D2PAK
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    STB6N80K5 Description

    STB6N80K5 Description

    The STB6N80K5 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device features a SuperMESH5™ series, which offers superior performance in terms of on-resistance and switching speed. With a drain-to-source voltage of 800V and a continuous drain current of 4.5A at 25°C, the STB6N80K5 is well-suited for various power electronics applications.

    STB6N80K5 Features

    • High Voltage and Current Handling: The STB6N80K5 can handle drain-to-source voltages up to 800V and continuous drain currents of 4.5A at 25°C, making it ideal for high-power applications.
    • Low On-Resistance: The device features a maximum on-resistance of 1.6Ω at 2A drain current and 10V gate-source voltage, ensuring efficient power dissipation.
    • Fast Switching Speed: With a maximum gate charge of 7.5nC at 10V gate-source voltage, the STB6N80K5 offers fast switching capabilities, reducing power losses in switching applications.
    • Robust Package: The device is available in a D2PAK package, providing excellent thermal performance and mechanical stability.
    • Environmental Compliance: The STB6N80K5 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

    STB6N80K5 Applications

    The STB6N80K5 is well-suited for a variety of high-power applications, including:

    1. Power Supplies: Due to its high voltage and current handling capabilities, the STB6N80K5 is ideal for use in power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
    2. Motor Control: The device's fast switching speed and low on-resistance make it suitable for motor control applications, including electric vehicles, industrial drives, and robotics.
    3. Renewable Energy: The STB6N80K5 can be used in renewable energy systems, such as solar inverters and wind power converters, where high voltage and current handling are required.

    Conclusion of STB6N80K5

    The STB6N80K5 is a powerful N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching speed. Its robust D2PAK package and environmental compliance make it an ideal choice for a wide range of high-power applications, including power supplies, motor control, and renewable energy systems. With its unique features and advantages over similar models, the STB6N80K5 is a reliable and efficient solution for demanding power electronics applications.

    Tech Specifications

    Configuration
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Mounting Style
    Unit Weight
    Vgs - Gate-Source Voltage
    Id - Continuous Drain Current
    Transistor Polarity
    RoHS
    Qg - Gate Charge
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Tradename
    Transistor Type
    Number of Channels
    Maximum Operating Temperature
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS
    Rds On - Drain-Source Resistance

    STB6N80K5 Documents

    Download datasheets and manufacturer documentation for STB6N80K5

    Ersa IPD/15/9124 20/Mar/2015      
    Ersa ST(B,D,I,P)6N80K5      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa ST(B,D,I,P)6N80K5      

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