STMicroelectronics_STP16NF06

STMicroelectronics
STP16NF06  
Single FETs, MOSFETs

STMicroelectronics
STP16NF06
278-STP16NF06
MOSFET N-CH 60V 16A TO220AB
In Stock : 13137

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STP16NF06 Description

STP16NF06 Description

The STP16NF06 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This device boasts a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of up to 16A at 25°C. With a maximum power dissipation of 45W, the STP16NF06 is well-suited for demanding power electronics applications.

STP16NF06 Features

  • High Voltage and Current Ratings: The STP16NF06 offers a Vdss of 60V and can handle a continuous Id of 16A, making it ideal for high-power applications.
  • Low On-Resistance: With an Rds(on) of just 100mOhm at 8A and 10V, this MOSFET provides efficient power switching with minimal power loss.
  • Fast Switching: The STP16NF06 has a low gate charge (Qg) of 13nC at 10V, enabling fast switching speeds and reduced switching losses.
  • Robust Gate Drive: The device can handle a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in gate drive circuit design.
  • Environmental Compliance: The STP16NF06 is compliant with RoHS3 and REACH regulations, ensuring environmental responsibility in manufacturing and use.
  • Reliability: With a moisture sensitivity level (MSL) of 1, this device is suitable for use in a wide range of environments without the need for special handling or storage conditions.

STP16NF06 Applications

The STP16NF06 is ideal for a variety of high-power applications, including:

  • Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, where efficient switching and power handling are critical.
  • Motor Controls: The low on-resistance and fast switching capabilities of the STP16NF06 make it an excellent choice for motor control applications, where precise control and efficient power delivery are required.
  • Industrial Automation: In industrial automation systems, the STP16NF06 can be used for controlling high-power loads, such as actuators and motors, with high efficiency and reliability.

Conclusion of STP16NF06

The STP16NF06 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its environmental compliance and reliability make it an excellent choice for a wide range of high-power applications, including power supplies, motor controls, and industrial automation. With its robust performance and unique features, the STP16NF06 stands out as a superior option in the competitive landscape of power MOSFETs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Plateau Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP16NF06 Documents

Download datasheets and manufacturer documentation for STP16NF06

Ersa STP16NF06(FP)      
Ersa STP16NF06 View All Specifications      
Ersa STP16NF06(FP)      

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