STMicroelectronics_STD11NM60ND

STMicroelectronics
STD11NM60ND  
Single FETs, MOSFETs

STMicroelectronics
STD11NM60ND
278-STD11NM60ND
Ersa
STMicroelectronics-STD11NM60ND-datasheets-2175705.pdf
MOSFET N-CH 600V 10A DPAK
In Stock : 1999

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STD11NM60ND Description

STD11NM60ND Description

The STD11NM60ND is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring robust power management and efficient switching. This N-Channel device boasts a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C, making it suitable for a wide range of power electronics applications.

STD11NM60ND Features

  • 600V Drain-to-Source Voltage (Vdss): Offers high-voltage capability for demanding power electronics applications.
  • 10A Continuous Drain Current (Id) @ 25°C: Provides ample current handling for various power management tasks.
  • 450mOhm Rds On (Max) @ 5A, 10V: Ensures low on-resistance for efficient power dissipation.
  • 30 nC Gate Charge (Qg) (Max) @ 10V: Minimizes switching losses and improves overall efficiency.
  • 850 pF Input Capacitance (Ciss) (Max) @ 50V: Reduces parasitic effects and enhances switching performance.
  • 5V Vgs(th) (Max) @ 250µA: Provides a low threshold voltage for easy gate drive.
  • ±25V Vgs (Max): Supports a wide range of gate voltages for flexible operation.
  • 90W Power Dissipation (Max): Allows for high power handling in various applications.
  • DPAK Package: Facilitates surface mount assembly for compact designs.
  • REACH Unaffected and ROHS3 Compliant: Ensures environmental compliance and regulatory adherence.

STD11NM60ND Applications

The STD11NM60ND is ideal for applications where high voltage and current handling are required, combined with low on-resistance for efficient power management. Some specific use cases include:

  • Power Supplies: Utilized in switching power supplies for efficient voltage regulation and current control.
  • Motor Controls: Employed in motor drive circuits for precise speed and torque control.
  • Industrial Automation: Integrated into control systems for reliable and efficient operation in harsh environments.
  • Automotive Electronics: Used in various automotive applications, such as electric power steering and battery management systems.

Conclusion of STD11NM60ND

The STD11NM60ND from STMicroelectronics stands out due to its combination of high voltage and current ratings, low on-resistance, and robust performance characteristics. Its DPAK package and surface mount design make it suitable for compact and space-constrained applications. With its REACH unaffected and ROHS3 compliant status, the STD11NM60ND is an environmentally friendly choice for power electronics designers looking for a reliable and efficient solution.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
Country of Origin

STD11NM60ND Documents

Download datasheets and manufacturer documentation for STD11NM60ND

Ersa Assembly Site 22/Dec/2022      
Ersa STx11NM60ND      
Ersa STB11NK40Z View All Specifications      
Ersa STx11NM60ND      

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