STMicroelectronics
STW35N60DM2
Single FETs, MOSFETs
STW35N60DM2
278-STW35N60DM2
STMicroelectronics-STW35N60DM2-datasheets-8896765.pdf
MOSFET N-CH 600V 28A TO247
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STW35N60DM2 Description
STW35N60DM2 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.
Description:
The STW35N60DM2 is an N-channel enhancement mode field-effect transistor (MOSFET) with a voltage rating of 600V and a continuous drain current (Id) of 35A. It is available in a TO-220 package, which is a popular and compact package for power transistors.
Features:
- High voltage rating: The STW35N60DM2 can operate at voltages up to 600V, making it suitable for high voltage applications.
- High current capability: With a continuous drain current of 35A, the STW35N60DM2 can handle high current loads.
- Low on-state resistance (RDS(on)): The STW35N60DM2 has a low on-state resistance, which minimizes power dissipation and improves efficiency.
- Fast switching: The MOSFET has a fast switching time, making it suitable for high-frequency applications.
- Robust design: The STW35N60DM2 is designed to withstand high voltage and current transients, making it suitable for use in demanding power electronic applications.
Applications:
The STW35N60DM2 can be used in a variety of power electronic applications, including:
- Motor control: The MOSFET can be used in motor control circuits to switch high currents and control motor speed.
- Power supplies: The STW35N60DM2 can be used in power supply circuits to regulate voltage and current.
- Energy management systems: The MOSFET can be used in energy management systems to control the flow of power in renewable energy systems, such as solar panels and wind turbines.
- Battery management systems: The STW35N60DM2 can be used in battery management systems to control the charging and discharging of batteries.
- Inverters: The MOSFET can be used in inverter circuits to convert DC power to AC power.
In summary, the STW35N60DM2 is a high voltage, high current N-channel MOSFET transistor that is suitable for use in a variety of power electronic applications. Its robust design and fast switching capabilities make it an ideal choice for demanding power electronic applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STW35N60DM2 Documents
Download datasheets and manufacturer documentation for STW35N60DM2
STW35N60DM2 Standard outer labelling 15/Nov/2023 STW35N60DM2 Related Parts
Shopping Guide
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