STMicroelectronics

STB160N75F3  

Single FETs, MOSFETs

STB160N75F3 Description

The STB160N75F3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 120A at 25°C, this MOSFET is ideal for power electronics applications. The device is packaged in a D2PAK package, suitable for surface mount applications.

STB160N75F3 Features

• High Voltage and Current Ratings: The STB160N75F3 can handle a maximum drain-to-source voltage of 75V and a continuous drain current of 120A at 25°C, making it suitable for high-power applications.
• Low On-Resistance: With a maximum on-resistance (Rds On) of 4mOhm at 60A and 10V, the STB160N75F3 offers efficient power dissipation and reduced power loss.
• Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V, ensuring reliable operation across a wide range of gate drive voltages.
• Low Gate Charge: The maximum gate charge (Qg) is 85nC at 10V, contributing to faster switching speeds and reduced switching losses.
• REACH Compliance: The STB160N75F3 is REACH unaffected, ensuring compliance with European regulations on the use of hazardous substances.
• RoHS Compliance: The device is RoHS3 compliant, making it suitable for applications requiring environmentally friendly components.

STB160N75F3 Applications

The STB160N75F3 is ideal for a wide range of power electronics applications, including:

• Power Supplies: Due to its high voltage and current ratings, the STB160N75F3 is well-suited for power supply designs, including DC-DC converters and power factor correction circuits.
• Motor Control: The low on-resistance and high current capability make it an excellent choice for motor control applications, such as electric vehicles and industrial motor drives.
• Solar Inverters: The STB160N75F3 can be used in solar inverter designs, where high power dissipation and low on-resistance are critical for efficiency.
• Battery Management Systems: The device's robust gate drive and low gate charge make it suitable for battery management systems, where precise control and fast switching are essential.

Conclusion of STB160N75F3

The STB160N75F3 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current ratings, low on-resistance, and robust gate drive. Its compliance with REACH and RoHS regulations makes it an environmentally friendly choice for power electronics applications. With its unique features and advantages, the STB160N75F3 is an ideal solution for applications requiring high power dissipation, low on-resistance, and fast switching speeds.

STB160N75F3 Documents

Download datasheets and manufacturer documentation for STB160N75F3

Datasheets :

STx160N75F3      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      

Other Related Documents :

STB100NF04 View All Specifications      

HTML Datasheet :

STx160N75F3      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013