STMicroelectronics_STP11NM60FD

STMicroelectronics
STP11NM60FD  
Single FETs, MOSFETs

STMicroelectronics
STP11NM60FD
278-STP11NM60FD
Ersa
STMicroelectronics-STP11NM60FD-datasheets-11173915.pdf
MOSFET N-CH 600V 11A TO220AB
In Stock : 1627

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STP11NM60FD Description

STP11NM60FD Description

The STP11NM60FD is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and control. With a drain-to-source voltage of 600V and continuous drain current of 11A at 25°C, this device delivers exceptional performance in demanding electronic systems. Its low on-resistance of 450mOhm at 5.5A and 10V ensures minimal power loss, while the maximum gate-source voltage of ±30V provides reliable operation in various circuits.

STP11NM60FD Features

  • 600V Drain-to-Source Voltage (Vdss): Offers robust protection against high voltage transients.
  • 11A Continuous Drain Current (Id): Enables efficient power handling in various applications.
  • 450mOhm On-Resistance (Rds On): Minimizes power dissipation and heat generation.
  • ±30V Maximum Gate-Source Voltage (Vgs): Ensures reliable operation in a wide range of circuits.
  • 40nC Maximum Gate Charge (Qg): Reduces switching losses and improves efficiency.
  • 900pF Maximum Input Capacitance (Ciss): Facilitates high-speed switching performance.
  • 160W Maximum Power Dissipation (Tc): Supports operation in high-power applications.
  • Through-Hole Mounting Type: Provides secure and reliable mechanical support in various PCB designs.
  • ROHS3 Compliance: Ensures environmental sustainability and regulatory compliance.
  • REACH Unaffected Status: Guarantees compliance with European Union chemical regulations.

STP11NM60FD Applications

The STP11NM60FD is ideal for a variety of applications where high voltage and current handling are required, including:

  1. Power Supplies: Provides efficient voltage regulation and current control in switching power supplies.
  2. Motor Control: Enables precise speed and torque control in electric motor drives.
  3. Industrial Automation: Offers reliable power management in robotic and automation systems.
  4. Automotive Electronics: Supports high-voltage applications in electric vehicles and automotive control systems.
  5. Renewable Energy Systems: Enhances power conversion and management in solar and wind energy systems.

Conclusion of STP11NM60FD

The STP11NM60FD from STMicroelectronics is a versatile and powerful N-Channel MOSFET, offering a combination of high voltage and current handling capabilities, low on-resistance, and robust protection against voltage transients. Its unique features, such as low gate charge and high input capacitance, make it an excellent choice for high-efficiency and high-speed switching applications. With its compliance with environmental and regulatory standards, the STP11NM60FD is a reliable and sustainable solution for a wide range of electronic systems.

Tech Specifications

Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP11NM60FD Documents

Download datasheets and manufacturer documentation for STP11NM60FD

Ersa STB11NM60FD(-1), STP11NM60FD(FP)      
Ersa STP11NM60FD View All Specifications      

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