STMicroelectronics' STB80NF55-06T4 is a high-power N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. Here is a brief description of the device, its features, and potential applications:
Description:
The STB80NF55-06T4 is an N-channel power MOSFET transistor that features a high cell density and low on-state resistance (RDS(on)). It is built on a robust and reliable ST Rugged Technology platform, which provides excellent short-circuit withstand capability and thermal performance.
Features:
High cell density: The STB80NF55-06T4 features a high cell density, which allows for a compact and efficient design.
Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power losses and improve overall efficiency.
Robust and reliable: Built on ST's Rugged Technology platform, the STB80NF55-06T4 offers excellent short-circuit withstand capability and thermal performance.
High-power device: With a continuous drain current (ID) of up to 80A and a drain-source voltage (VDS) of up to 55V, the STB80NF55-06T4 is suitable for high-power applications.
Applications:
The STB80NF55-06T4 is suitable for a wide range of power electronic applications, including:
Motor control: The device can be used in motor control applications, such as in industrial automation, robotics, and automotive systems.
Power supplies: The STB80NF55-06T4 can be used in power supply applications, such as in switching power supplies and battery chargers.
Renewable energy systems: The device can be used in renewable energy systems, such as solar panel inverters and wind turbine converters.
Electric vehicles: The STB80NF55-06T4 can be used in various electric vehicle applications, such as in the control of electric motors for propulsion and auxiliary systems.
In summary, the STB80NF55-06T4 is a high-power N-channel MOSFET transistor from STMicroelectronics that offers a compact design, low on-state resistance, and robust performance. It is suitable for a wide range of power electronic applications, including motor control, power supplies, renewable energy systems, and electric vehicles.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB80NF55-06T4 Documents
Download datasheets and manufacturer documentation for STB80NF55-06T4
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