STMicroelectronics_STP120N4F6

STMicroelectronics
STP120N4F6  
Single FETs, MOSFETs

STMicroelectronics
STP120N4F6
278-STP120N4F6
Ersa
STMicroelectronics-STP120N4F6-datasheets-12161031.pdf
MOSFET N-CH 40V 80A TO220AB
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STP120N4F6 Description

STP120N4F6 Description

The STP120N4F6 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. It features a robust design with a maximum drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C. The device is housed in a TO220AB package, making it suitable for through-hole mounting. With a maximum power dissipation of 110W and a low Rds On of 4.3mOhm at 40A and 10V, the STP120N4F6 offers excellent efficiency and performance in demanding applications.

STP120N4F6 Features

  • Technology: MOSFET (Metal Oxide) with DeepGATE™ and STripFET™ VI series for improved performance.
  • Input Capacitance (Ciss): Maximum of 3850 pF at 25V.
  • Gate Charge (Qg): Maximum of 65 nC at 10V.
  • Vgs (Max): ±20V for reliable operation.
  • Vgs(th) (Max): 4V at 250µA for efficient gate control.
  • Rds On (Max): 4.3mOhm at 40A and 10V for low conduction losses.
  • Drain to Source Voltage (Vdss): 40V for high voltage applications.
  • Current - Continuous Drain (Id): 80A at 25°C for high current applications.
  • Power Dissipation (Max): 110W (Tc) for high power applications.
  • Mounting Type: Through Hole for easy integration into existing designs.
  • Package: Tube for protection and ease of handling.

STP120N4F6 Applications

The STP120N4F6 is ideal for a wide range of high-performance applications, including:

  1. Automotive: Powertrain control, electric vehicle charging systems, and battery management systems.
  2. Industrial: Motor control, power supplies, and renewable energy systems.
  3. Consumer Electronics: High-power audio amplifiers, battery chargers, and power management circuits.

Conclusion of STP120N4F6

The STP120N4F6 from STMicroelectronics is a powerful and reliable N-Channel MOSFET designed for demanding automotive and industrial applications. Its high voltage and current ratings, combined with low Rds On and excellent gate control, make it an ideal choice for high-performance power management and motor control applications. With its robust design and compliance with RoHS3 and REACH regulations, the STP120N4F6 offers a reliable and eco-friendly solution for your next project.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP120N4F6 Documents

Download datasheets and manufacturer documentation for STP120N4F6

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