STMicroelectronics_STP10P6F6

STMicroelectronics
STP10P6F6  
Single FETs, MOSFETs

STMicroelectronics
STP10P6F6
278-STP10P6F6
Ersa
STMicroelectronics-STP10P6F6-datasheets-1456049.pdf
MOSFET P-CH 60V 10A TO220
In Stock : 555

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STP10P6F6 Description

STP10P6F6 Description

The STP10P6F6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at 25°C, this P-Channel MOSFET is ideal for various power electronics applications.

STP10P6F6 Features

  • Technology: MOSFET (Metal Oxide), ensuring high efficiency and low power consumption.
  • Drain to Source Voltage (Vdss): 60V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id): 10A at 25°C, providing ample current handling capability.
  • Rds On (Max): 160mOhm @ 5A, 10V, ensuring low on-resistance for efficient power delivery.
  • Gate Charge (Qg) (Max): 6.4 nC @ 10V, contributing to fast switching speeds.
  • Input Capacitance (Ciss) (Max): 340 pF @ 48 V, minimizing capacitive effects.
  • Operating Temperature: 175°C (TJ), allowing for use in high-temperature environments.
  • Mounting Type: Through Hole, providing a secure and reliable connection.
  • Package: Tube, offering protection and ease of handling.
  • Series: DeepGATE™, STripFET™ VI, known for their advanced features and performance.

STP10P6F6 Applications

The STP10P6F6 is well-suited for a variety of applications where high voltage and current handling are required, such as:

  • Power Supplies: Due to its high Vdss and Id ratings, it is ideal for power supply designs.
  • Motor Controls: Its low Rds On and high Id make it suitable for motor control applications.
  • Industrial Automation: The robustness of the STP10P6F6 makes it a good fit for industrial automation systems.
  • Automotive Electronics: The high operating temperature and power dissipation capabilities make it suitable for automotive applications.

Conclusion of STP10P6F6

While the STP10P6F6 has been declared obsolete, it remains a powerful component for legacy systems or applications where its specific performance characteristics are required. Its high voltage and current ratings, combined with low on-resistance and fast switching speeds, make it an excellent choice for high-performance power electronics applications. However, due to its obsolescence, it is recommended to consider alternative models for new designs to ensure long-term availability and support.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Supplier Temperature Grade
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)

STP10P6F6 Documents

Download datasheets and manufacturer documentation for STP10P6F6

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