STMicroelectronics_STD26P3LLH6

STMicroelectronics
STD26P3LLH6  
Single FETs, MOSFETs

STMicroelectronics
STD26P3LLH6
278-STD26P3LLH6
Ersa
STMicroelectronics-STD26P3LLH6-datasheets-10305702.pdf
MOSFET P-CH 30V 12A DPAK
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STD26P3LLH6 Description

STD26P3LLH6 Description

The STD26P3LLH6 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and high efficiency. With a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C, this device is well-suited for a variety of power electronics applications. The STD26P3LLH6 is manufactured using DeepGATE™ and STripFET™ VI technology, ensuring low on-resistance and high switching speed.

STD26P3LLH6 Features

  • Input Capacitance (Ciss): 1450 pF at 25V, minimizing input charging current and improving overall efficiency.
  • Gate Charge (Qg): 12 nC at 4.5V, reducing switching losses and enabling faster switching times.
  • Rds On (Max): 30 mOhm at 6A, 10V, providing low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 2.5V at 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 40W (Tc), allowing for high power applications.
  • Operating Temperature: 175°C (TJ), suitable for high-temperature environments.
  • Mounting Type: Surface Mount, facilitating integration into compact designs.
  • RoHS Compliance: ROHS3 Compliant, adhering to environmental regulations.
  • REACH Status: REACH Unaffected, ensuring compliance with European chemical regulations.

STD26P3LLH6 Applications

The STD26P3LLH6 is ideal for applications where high power handling, low on-resistance, and high efficiency are critical. Some specific use cases include:

  • Power Supplies: Due to its high power dissipation and low on-resistance, the STD26P3LLH6 is well-suited for power supply designs.
  • Motor Controls: The device's high current handling capability makes it an excellent choice for motor control applications.
  • Automotive Electronics: The high operating temperature and robust construction make it suitable for automotive electronics, such as inverter systems.

Conclusion of STD26P3LLH6

The STD26P3LLH6 from STMicroelectronics stands out for its high power handling capabilities, low on-resistance, and high efficiency, making it an excellent choice for a variety of power electronics applications. Its unique features, such as low gate charge and high input capacitance, ensure fast switching and minimal power loss, providing a competitive edge over similar models. With its robust construction and compliance with environmental regulations, the STD26P3LLH6 is a reliable choice for demanding applications in power supplies, motor controls, and automotive electronics.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD26P3LLH6 Documents

Download datasheets and manufacturer documentation for STD26P3LLH6

Ersa STD26P3LLH6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STD26P3LLH6      

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