STMicroelectronics_STL8N65M2

STMicroelectronics
STL8N65M2  
Single FETs, MOSFETs

STMicroelectronics
STL8N65M2
278-STL8N65M2
Ersa
STMicroelectronics-STL8N65M2-datasheets-3142561.pdf
MOSFET N-CH 650V 5A PWRFLAT56 HV
In Stock : 3019

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ISO9001
Quality Policy
ISO45001
ISO14001

STL8N65M2 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the STL8N65M2 belongs to can be classified under the Discrete Semiconductors. STL8N65M2 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. STL8N65M2 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. STMicroelectronics plays a crucial role in ensuring the smooth flow of goods and meeting market demand. STMicroelectronics is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, STMicroelectronics builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Pd - Power Dissipation
Base Product Number
ECCN (EU)
Country of Origin

STL8N65M2 Documents

Download datasheets and manufacturer documentation for STL8N65M2

Ersa Mult Dev Wafer Site Add 3/Aug/2018      
Ersa STL8N65M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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