STMicroelectronics

STP23NM60ND  

Single FETs, MOSFETs

STP23NM60ND Description

The STP23NM60ND is a MOSFET N-CH 600V 19.5A TO220AB device manufactured by STMicroelectronics. This single FET is part of the FDmesh™ II series and is designed for high-power applications. With a maximum drain-source voltage of 600V and a continuous drain current of 19.5A at 25°C, this device offers excellent performance in demanding electronic systems. The STP23NM60ND is obsolete, but its unique features and advantages make it suitable for certain applications.

STP23NM60ND Features

• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
• Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
• Vgs (Max): ±25V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Power Dissipation (Max): 150W (Tc)
• Operating Temperature: 150°C (TJ)
• Moisture Sensitivity Level (MSL): 1 (Unlimited)
• Mounting Type: Through Hole
• Package: Tube
• REACH Status: REACH Unaffected
• RoHS Status: ROHS3 Compliant
• ECCN: EAR99
• HTSUS: 8541.29.0095

STP23NM60ND Applications

The STP23NM60ND is ideal for high-power applications that require a robust and reliable MOSFET. Some specific use cases include:

1. Power Electronics: Due to its high drain-source voltage and continuous drain current, this device is suitable for power electronics applications such as power supplies, inverters, and motor drives.
2. Industrial Control: The STP23NM60ND can be used in industrial control systems that require high power and voltage handling capabilities.
3. Automotive Electronics: This MOSFET can be used in automotive applications such as electric power steering, battery management systems, and electric vehicle charging stations.

Conclusion of STP23NM60ND

While the STP23NM60ND is an obsolete product, its unique features and advantages make it suitable for certain high-power applications. Its high drain-source voltage, continuous drain current, and low Rds On values provide excellent performance in demanding electronic systems. Although it may not be the latest technology, the STP23NM60ND remains a reliable choice for applications that require a robust and efficient MOSFET.

STP23NM60ND Documents

Download datasheets and manufacturer documentation for STP23NM60ND