STMicroelectronics_STP10NM60ND
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STMicroelectronics
STP10NM60ND

278-STP10NM60ND
600V 8A N-CH MOSFET TO-220 600mR FDmesh II

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
470mR
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
25V
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STP10NM60ND Description

N-Channel 600 V 8A (Tc) 70W (Tc) Through Hole TO-220

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