
STMicroelectronics
STP10NM60ND
278-STP10NM60ND
600V 8A N-CH MOSFET TO-220 600mR FDmesh II
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Responsible qualityTech Specifications
Package/Case
TO-220
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
470mR
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
25V
STP10NM60ND Description
N-Channel 600 V 8A (Tc) 70W (Tc) Through Hole TO-220
FAQ
Are there related or alternative parts for STP10NM60ND?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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