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STMicroelectronics
STI11NM60ND
278-STI11NM60ND
PDF Datasheet
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
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Tech Specifications
Package/Case
TO-262-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
STI11NM60ND Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole I2PAK
FAQ
What is STI11NM60ND?
STI11NM60ND is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for STI11NM60ND?
What operating temperature range does STI11NM60ND support?
Is STI11NM60ND currently in stock?
What is the mounting type of STI11NM60ND?
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