STMicroelectronics

STB18NM60ND  

Single FETs, MOSFETs

STB18NM60ND Description

The STB18NM60ND from STMicroelectronics is a 600V N-channel MOSFET utilizing advanced FDmesh™ II technology, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 13A (at 25°C case temperature) and a low on-resistance (Rds(on)) of 290mΩ (at 10V gate drive), this MOSFET delivers robust performance in demanding circuits. Its 600V drain-to-source voltage (Vdss) rating ensures reliability in high-voltage environments, while the ±25V gate-to-source voltage (Vgs) tolerance provides flexibility in drive circuitry. Though marked as obsolete, its RoHS3 compliance and REACH unaffected status make it suitable for legacy designs requiring dependable power management.

STB18NM60ND Features

• FDmesh™ II Technology: Enhances switching efficiency and reduces conduction losses.
• Low Gate Charge (Qg): 34nC at 10V minimizes switching losses, improving high-frequency performance.
• High Power Handling: 110W max power dissipation (Tc) and 150°C junction temperature (TJ) rating for thermal resilience.
• Surface-Mount D2PAK Package: Optimized for automated assembly and high-power PCB designs.
• Fast Switching: Low input capacitance (Ciss) of 1030pF at 50V ensures rapid turn-on/off transitions.
• Robust Protection: ESD-resistant and MSL1 (unlimited shelf life) for long-term reliability.

STB18NM60ND Applications

• Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
• Motor Drives: Inverter modules for industrial and automotive systems.
• Lighting Solutions: LED drivers and ballast control circuits.
• Renewable Energy: Solar inverters and battery management systems.
• Industrial Automation: High-current switching in PLCs and motor controllers.

Conclusion of STB18NM60ND

The STB18NM60ND excels in high-voltage, high-efficiency applications, leveraging STMicroelectronics' FDmesh™ II technology for superior thermal and electrical performance. While obsolete, its low Rds(on), high Vdss, and robust packaging make it a viable choice for legacy or cost-sensitive designs requiring reliable power switching. Ideal for industrial, automotive, and energy systems, this MOSFET balances performance with durability. Designers should consider alternative FDmesh™ II series models for new projects.

STB18NM60ND Documents

Download datasheets and manufacturer documentation for STB18NM60ND

Datasheets :

STx18NM60ND      

HTML Datasheet :

STx18NM60ND      

PCN Design/Specification :

IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013