The STP4LN80K5 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. This device is part of the MDmesh™ K5 series and is offered in a TO220 package. With its robust features and superior performance, the STP4LN80K5 is an excellent choice for various power electronics applications.
STP4LN80K5 Features
Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power consumption.
Drain to Source Voltage (Vdss): 800V - Ideal for high-voltage applications.
Current - Continuous Drain (Id) @ 25°C: 3A (Tc) - Capable of handling significant current loads.
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V - Offers low on-resistance for improved efficiency.
The STP4LN80K5 is well-suited for a variety of applications where high voltage and current handling are required, including:
Power Supplies: Ideal for high-voltage power supply designs, providing efficient switching and low on-resistance.
Motor Controls: Capable of handling the high currents and voltages needed for motor control applications.
Industrial Automation: Reliable performance in demanding industrial environments, making it suitable for automation systems.
Renewable Energy: Supports the high-voltage requirements of solar inverters and wind power systems.
Conclusion of STP4LN80K5
The STP4LN80K5 from STMicroelectronics is a powerful N-channel MOSFET that delivers exceptional performance in high-voltage and high-current applications. Its unique features, such as low on-resistance, high gate voltage, and compliance with environmental standards, make it an ideal choice for power electronics designers looking to optimize efficiency and reliability. With its robust performance and versatility, the STP4LN80K5 is poised to meet the demands of a wide range of applications in the electronics industry.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP4LN80K5 Documents
Download datasheets and manufacturer documentation for STP4LN80K5
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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