STMicroelectronics
STB5N80K5  
Single FETs, MOSFETs

STMicroelectronics
STB5N80K5
278-STB5N80K5
Ersa
STMicroelectronics-STB5N80K5-datasheets-8848999.pdf
MOSFET N-CH 800V 4A D2PAK
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    STB5N80K5 Description

    STB5N80K5 is a high-voltage N-channel power MOSFET from STMicroelectronics. It is designed for use in a variety of power electronics applications, including motor control, power supplies, and energy management systems.

    Description:

    The STB5N80K5 is an N-channel power MOSFET with a continuous drain current (Id) of 8.5A and a drain-source voltage (Vdss) of 800V. It is available in a TO-220 package, which is suitable for use in a wide range of applications.

    Features:

    • High voltage rating: 800V drain-source voltage (Vdss)
    • High current capability: Continuous drain current (Id) of 8.5A
    • Low on-state resistance (RDS(on)): 0.055 ohms maximum at 25°C
    • Fast switching speed: Gate charge (Qg) of 34nC maximum
    • High temperature operation: Junction temperature range of -65°C to 175°C
    • Built-in protection features: Overload protection, overvoltage protection, and thermal shutdown

    Applications:

    The STB5N80K5 is suitable for use in a variety of power electronics applications, including:

    1. Motor control: Brushless DC motor control, AC motor control, and stepper motor control
    2. Power supplies: Switch mode power supplies (SMPS), power factor correction (PFC) circuits, and uninterruptible power supplies (UPS)
    3. Energy management systems: Solar energy systems, battery management systems, and energy storage systems
    4. Industrial automation: Servo drives, robotic control, and programmable logic controllers (PLC)
    5. Lighting: LED lighting, street lighting, and emergency lighting

    In summary, the STB5N80K5 is a high-voltage, high-current N-channel power MOSFET that offers fast switching, low on-state resistance, and built-in protection features. It is suitable for use in a wide range of power electronics applications, including motor control, power supplies, and energy management systems.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    REACH Status
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STB5N80K5 Documents

    Download datasheets and manufacturer documentation for STB5N80K5

    Ersa STB5N80K5 Datasheet      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa Mult Dev Reinstate 6/Aug/2020       Mult Dev OBS 3/Jul/2020      
    Ersa STB5N80K5 Datasheet      

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