STMicroelectronics

STB45NF06T4  

Single FETs, MOSFETs

STB45NF06T4 Description

The STB45NF06T4 from STMicroelectronics is a high-performance N-channel MOSFET designed for power management applications. Part of the STripFET™ II series, it features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 38A at 25°C (case temperature). With an ultra-low on-resistance (Rds(on)) of just 28mΩ at 10V gate drive, this MOSFET minimizes conduction losses, making it ideal for high-efficiency switching applications. The device operates within a wide temperature range of up to 175°C (TJ) and is housed in a D2PAK (TO-263) surface-mount package, ensuring robust thermal performance and ease of PCB integration.

STB45NF06T4 Features

• Low Rds(on): 28mΩ @ 10V Vgs, reducing power dissipation and improving efficiency.
• High Current Handling: 38A continuous drain current (Tc) for demanding power applications.
• Fast Switching: Optimized gate charge (Qg = 58nC @ 10V) and input capacitance (Ciss = 1730pF @ 25V) ensure minimal switching losses.
• Robust Construction: STripFET™ II technology enhances thermal stability and reliability.
• Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive requirements.
• Environmental Compliance: ROHS3 and REACH compliant, with MSL1 (unlimited) moisture sensitivity for extended shelf life.

STB45NF06T4 Applications

This MOSFET excels in high-current, high-efficiency switching circuits, including:

• DC-DC Converters: Optimized for synchronous rectification in buck/boost topologies.
• Motor Control: Suitable for H-bridge and PWM-driven motor drives.
• Power Supplies: Ideal for SMPS, UPS, and industrial power systems.
• Automotive Systems: Robust performance for LED drivers, battery management, and load switches.
• Industrial Automation: Reliable operation in PLCs, inverters, and high-power switching modules.

Conclusion of STB45NF06T4

The STB45NF06T4 stands out as a high-efficiency, low-loss MOSFET with superior thermal performance and switching characteristics. Its low Rds(on), high current capability, and rugged D2PAK package make it a preferred choice for engineers designing power electronics in automotive, industrial, and consumer applications. STMicroelectronics' STripFET™ II technology ensures long-term reliability, making this MOSFET a dependable solution for modern power management challenges.

STB45NF06T4 Documents

Download datasheets and manufacturer documentation for STB45NF06T4

PCN Assembly/Origin :

Mult Devices Testing 10/May/2018      

Datasheets :

STB45NF06      

PCN Packaging :

Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      

Other Related Documents :

STB45NF06 View All Specifications      

HTML Datasheet :

STB45NF06      

PCN Design/Specification :

D2PAK Lead Modification 04/Oct/2013