STMicroelectronics_STL8N6F7

STMicroelectronics
STL8N6F7  
Single FETs, MOSFETs

STMicroelectronics
STL8N6F7
278-STL8N6F7
Ersa
STMicroelectronics-STL8N6F7-datasheets-7598374.pdf
MOSFET N-CH 60V 36A POWERFLAT
In Stock : 120000

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STL8N6F7 Description

STL8N6F7 Description

The STL8N6F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for power electronics applications. It offers a robust combination of technical specifications and performance benefits, making it an ideal choice for various applications. The device features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 36A at 25°C. With a maximum power dissipation of 3W at ambient temperature and 60W at case temperature, the STL8N6F7 can handle demanding power requirements.

STL8N6F7 Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 450 pF @ 25V - Minimizes input capacitance for faster switching speeds.
  • Gate Charge (Qg): 8 nC @ 10V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 25mOhm @ 4A, 10V - Offers low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 4V @ 250µA - Ensures reliable turn-on and stable operation.
  • Drive Voltage: 10V - Simplifies gate drive requirements.
  • Mounting Type: Surface Mount - Facilitates integration into compact designs.
  • Package: PowerFlat™ (3.3x3.3) - Delivers high power density in a small footprint.
  • REACH Status: REACH Unaffected - Complies with European chemical regulations.
  • RoHS Status: ROHS3 Compliant - Meets environmental standards for hazardous substances.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for a wide range of manufacturing processes.

STL8N6F7 Applications

The STL8N6F7 is ideal for various power electronics applications, including:

  1. Motor Control: Its low on-resistance and high current capability make it suitable for motor drive circuits.
  2. Power Supplies: The device's high voltage and power dissipation ratings are well-suited for power supply designs.
  3. Automotive Electronics: The STL8N6F7 can be used in automotive applications, such as electric power steering and battery management systems.
  4. Industrial Control: Its robust performance characteristics make it suitable for industrial control systems and power conversion applications.

Conclusion of STL8N6F7

The STL8N6F7 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics. Its unique combination of technical specifications, performance benefits, and compliance with environmental standards make it an excellent choice for a wide range of power electronics applications. With its low on-resistance, high current capability, and compact package, the STL8N6F7 delivers reliable performance and efficiency in demanding power electronics designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL8N6F7 Documents

Download datasheets and manufacturer documentation for STL8N6F7

Ersa Carrier/Cover Tape Supplier 23/Sep/2021      
Ersa STL8N6F7 Datasheet      

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