STMicroelectronics
STB26N60M2  
Single FETs, MOSFETs

STMicroelectronics
STB26N60M2
278-STB26N60M2
Ersa
STMicroelectronics-STB26N60M2-datasheets-4649221.pdf
MOSFET N-CHANNEL 600V 20A D2PAK
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STB26N60M2 Description

STB26N60M2 Description

The STB26N60M2 is a high-performance MOSFET N-CHANNEL device manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in various applications, thanks to its advanced MOSFET (Metal Oxide) technology. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C, the STB26N60M2 is capable of handling high power requirements. Its low Rds On of 165mOhm at 10A and 10V ensures efficient power dissipation, with a maximum power dissipation (Pd) of 169W at Tc. The device is mounted on a D2PAK package, making it suitable for surface mount applications.

STB26N60M2 Features

  • High Voltage and Current Handling: The STB26N60M2 can handle a drain-to-source voltage of 600V and a continuous drain current of 20A at 25°C, making it ideal for high-power applications.
  • Low Rds On: With a maximum Rds On of 165mOhm at 10A and 10V, the STB26N60M2 offers efficient power dissipation and reduced power losses.
  • Advanced MOSFET Technology: Utilizing MOSFET (Metal Oxide) technology, the STB26N60M2 provides improved performance and reliability compared to traditional FETs.
  • Surface Mount Package: The D2PAK package allows for easy integration into surface mount applications, reducing overall footprint and improving manufacturing efficiency.
  • Compliance and Environmental Standards: The STB26N60M2 is compliant with RoHS3 and REACH standards, ensuring environmental responsibility and regulatory compliance.

STB26N60M2 Applications

The STB26N60M2 is ideal for a variety of applications where high voltage and current handling are required. Some specific use cases include:

  • Power Supplies: The STB26N60M2 can be used in power supply designs, such as switching power supplies and voltage regulators, where high voltage and current handling are critical.
  • Industrial Automation: In industrial automation systems, the STB26N60M2 can be employed in motor control applications, providing efficient power management and control.
  • Automotive Applications: The STB26N60M2 is suitable for automotive applications, such as electric vehicle charging systems and power management, where high voltage and current handling are essential.
  • Renewable Energy Systems: In renewable energy systems, such as solar inverters and wind turbines, the STB26N60M2 can be used to manage and control high power requirements.

Conclusion of STB26N60M2

The STB26N60M2 is a high-performance MOSFET N-CHANNEL device that offers exceptional voltage and current handling capabilities, making it ideal for a wide range of high-power applications. Its advanced MOSFET technology, low Rds On, and compliance with environmental standards make it a standout choice in the electronics industry. With its unique features and advantages, the STB26N60M2 is a reliable and efficient solution for power management and control in various applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB26N60M2 Documents

Download datasheets and manufacturer documentation for STB26N60M2

Ersa STB26N60M2 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB26N60M2 Datasheet      

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