The STD16N65M2 from STMicroelectronics is a 650V N-channel MOSFET utilizing advanced MDmesh™ M2 technology, designed for high-efficiency power switching applications. Packaged in a DPAK (TO-252) surface-mount configuration, it offers a robust 11A continuous drain current (Id) at 25°C and a low on-resistance (Rds(on)) of 360mΩ at 10V gate drive, ensuring minimal conduction losses. With a maximum gate-source voltage (Vgs) of ±25V and a threshold voltage (Vgs(th)) of 4V, it provides reliable switching performance. The device is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.
The STD16N65M2 stands out as a high-performance MOSFET, combining low conduction losses, fast switching, and thermal robustness in a compact DPAK package. Its MDmesh™ M2 technology ensures superior efficiency in demanding applications like SMPS, motor drives, and renewable energy systems. With RoHS3 compliance and REACH unaffected status, it meets modern environmental standards, making it a reliable choice for power electronics designers.
Download datasheets and manufacturer documentation for STD16N65M2