STMicroelectronics_STD16N65M2

STMicroelectronics
STD16N65M2  
Single FETs, MOSFETs

STMicroelectronics
STD16N65M2
278-STD16N65M2
Ersa
STMicroelectronics-STD16N65M2-datasheets-10367983.pdf
MOSFET N-CH 650V 11A DPAK
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STD16N65M2 Description

STD16N65M2 Description

The STD16N65M2 from STMicroelectronics is a 650V N-channel MOSFET utilizing advanced MDmesh™ M2 technology, designed for high-efficiency power switching applications. Packaged in a DPAK (TO-252) surface-mount configuration, it offers a robust 11A continuous drain current (Id) at 25°C and a low on-resistance (Rds(on)) of 360mΩ at 10V gate drive, ensuring minimal conduction losses. With a maximum gate-source voltage (Vgs) of ±25V and a threshold voltage (Vgs(th)) of 4V, it provides reliable switching performance. The device is RoHS3 compliant and REACH unaffected, making it suitable for environmentally conscious designs.

STD16N65M2 Features

  • High Voltage Rating: 650V Vdss for robust operation in high-voltage circuits.
  • Low Gate Charge (Qg): 19.5nC @ 10V reduces switching losses, improving efficiency.
  • Optimized Switching Performance: MDmesh™ M2 technology enhances switching speed and reduces EMI.
  • Thermal Efficiency: 110W power dissipation (Tc) ensures reliable operation under high loads.
  • Surface-Mount DPAK Package: Compact and suitable for automated assembly.
  • Wide Vgs Range: ±25V offers flexibility in drive circuit design.

STD16N65M2 Applications

  • Switch-Mode Power Supplies (SMPS): Ideal for PFC, flyback, and forward converters due to high voltage and low Rds(on).
  • Motor Drives and Inverters: Efficient switching for industrial and automotive motor control.
  • Lighting Systems: Suitable for LED drivers and ballasts requiring high-voltage handling.
  • Renewable Energy: Used in solar inverters and energy storage systems for efficient power conversion.

Conclusion of STD16N65M2

The STD16N65M2 stands out as a high-performance MOSFET, combining low conduction losses, fast switching, and thermal robustness in a compact DPAK package. Its MDmesh™ M2 technology ensures superior efficiency in demanding applications like SMPS, motor drives, and renewable energy systems. With RoHS3 compliance and REACH unaffected status, it meets modern environmental standards, making it a reliable choice for power electronics designers.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD16N65M2 Documents

Download datasheets and manufacturer documentation for STD16N65M2

Ersa Assembly Site 22/Dec/2022      
Ersa STD16N65M2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD16N65M2      

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