STMicroelectronics_STF8N65M5

STMicroelectronics
STF8N65M5  
Single FETs, MOSFETs

STMicroelectronics
STF8N65M5
278-STF8N65M5
Ersa
STMicroelectronics-STF8N65M5-datasheets-10750925.pdf
MOSFET N-CH 650V 7A TO220FP
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STF8N65M5 Description

STF8N65M5 Description

The STF8N65M5 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring high voltage and current capabilities. With a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C, this N-Channel device offers robust performance in various electronic systems.

STF8N65M5 Features

  • High Voltage and Current Handling: The STF8N65M5 can handle a maximum drain-source voltage of 650V and a continuous drain current of 7A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 600mOhm at 3.5A and 10V, this MOSFET provides efficient power switching with minimal power loss.
  • Low Gate Charge: The maximum gate charge (Qg) is 15nC at 10V, reducing switching losses and improving overall efficiency.
  • Robust Operating Temperature: The device can operate at a junction temperature (TJ) of up to 150°C, ensuring reliable performance in harsh environments.
  • Compliance with Regulations: The STF8N65M5 is compliant with RoHS3 and REACH regulations, making it an environmentally friendly choice for electronic designs.
  • Package and Mounting: The device is available in a through-hole TO220FP package, providing a secure and reliable connection in various circuit boards.

STF8N65M5 Applications

The STF8N65M5 is ideal for applications where high voltage and current handling are required, such as:

  • Power Supplies: The high voltage and current ratings make it suitable for power supply designs, including switching power supplies and battery chargers.
  • Motor Controls: The device's robust performance and low on-resistance make it ideal for motor control applications, including electric vehicles and industrial motor drives.
  • Industrial Automation: The STF8N65M5 can be used in various industrial automation systems, such as robotic arms and conveyor belts, where high power and reliability are crucial.

Conclusion of STF8N65M5

The STF8N65M5 from STMicroelectronics is a versatile and high-performance MOSFET, offering a combination of high voltage and current handling, low on-resistance, and compliance with environmental regulations. Its robust performance and wide operating temperature range make it an excellent choice for various high-power applications, including power supplies, motor controls, and industrial automation systems. With its unique features and advantages, the STF8N65M5 stands out as a reliable and efficient solution in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STF8N65M5 Documents

Download datasheets and manufacturer documentation for STF8N65M5

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