The STF33N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 24A at 25°C, this device is ideal for use in various power electronics applications. The STF33N65M2 features a low on-resistance (Rds On) of 140mOhm at 12A and 10V, ensuring efficient power dissipation and reduced power loss. The device is mounted in a through-hole TO220FP package, making it suitable for a wide range of applications.
The STF33N65M2 is ideal for use in a wide range of power electronics applications, including:
The STF33N65M2 is a versatile and high-performance N-Channel MOSFET that offers excellent voltage and current handling capabilities, making it an ideal choice for a wide range of power electronics applications. Its low on-resistance, high-voltage rating, and compliance with environmental and regulatory standards make it a preferred choice over similar models. With its robust performance and reliable operation, the STF33N65M2 is a valuable addition to any power electronics design.
Download datasheets and manufacturer documentation for STF33N65M2