STMicroelectronics_STP8NK100Z

STMicroelectronics
STP8NK100Z  
Single FETs, MOSFETs

STMicroelectronics
STP8NK100Z
278-STP8NK100Z
MOSFET N-CH 1000V 6.5A TO220AB
In Stock : 311

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STP8NK100Z Description

STP8NK100Z Description

The STP8NK100Z is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain to source voltage (Vdss) of 1000V and a continuous drain current (Id) of 6.5A at 25°C, this N-Channel device offers excellent electrical characteristics for demanding power electronics applications. The STP8NK100Z is part of the SuperMESH™ series, known for its superior performance and reliability.

STP8NK100Z Features

  • High Voltage Rating: The STP8NK100Z boasts a drain to source voltage (Vdss) of 1000V, making it suitable for high-voltage applications.
  • Low On-Resistance: With an Rds On (Max) of 1.85Ohm at 3.15A and 10V, this MOSFET provides low conduction losses, improving efficiency in power applications.
  • Robust Gate Drive: A gate charge (Qg) of 102 nC at 10V and a gate-source voltage (Vgs) of ±30V ensure reliable and efficient gate control.
  • Power Dissipation: Capable of handling up to 160W of power dissipation (Tc), the STP8NK100Z is designed for high-power applications.
  • Environmental Compliance: The STP8NK100Z is REACH Unaffected and RoHS3 Compliant, ensuring environmental safety and regulatory compliance.
  • Moisture Sensitivity Level: With an MSL of 1, the device is not sensitive to moisture, allowing for flexible storage and handling.
  • Package Type: The STP8NK100Z comes in a through-hole TO220AB package, providing a robust and reliable mechanical structure.

STP8NK100Z Applications

The STP8NK100Z is ideal for a variety of high-power applications where high voltage and current handling are required. Some specific use cases include:

  • Power Supplies: In switch-mode power supplies (SMPS) and power conversion systems, the STP8NK100Z can handle the high voltage and current demands.
  • Industrial Control: For motor drives and industrial automation systems, this MOSFET provides the necessary power handling and switching speed.
  • Automotive Electronics: In automotive applications such as electric power steering and battery management systems, the STP8NK100Z's high voltage and power dissipation capabilities are crucial.

Conclusion of STP8NK100Z

The STP8NK100Z from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its robust electrical characteristics, combined with its environmental compliance and moisture insensitivity, make it an excellent choice for power electronics, industrial control, and automotive electronics. With its SuperMESH™ technology, the STP8NK100Z offers superior performance and reliability, setting it apart from similar models in the market.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP8NK100Z Documents

Download datasheets and manufacturer documentation for STP8NK100Z

Ersa ST(F,P)8NK100Z      
Ersa STP8NK100Z View All Specifications      
Ersa ST(F,P)8NK100Z      

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