STMicroelectronics_STB9NK80Z

STMicroelectronics
STB9NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STB9NK80Z
278-STB9NK80Z
Ersa
STMicroelectronics-STB9NK80Z-datasheets-6096678.pdf
MOSFET N-CH 800V 5.2A D2PAK
In Stock : 15120

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STB9NK80Z Description

STB9NK80Z is a high voltage N-channel power MOSFET from STMicroelectronics. It is designed for high voltage applications and offers excellent electrical characteristics and performance.

Description:

The STB9NK80Z is an N-channel power MOSFET with a voltage rating of 800V and a continuous drain current of 8.0A. It is available in a TO-220 package and features a low on-state resistance (RDS(on)) of 0.08 Ohms maximum at a gate-source voltage (VGS) of 10V.

Features:

  • High voltage rating of 800V
  • Continuous drain current of 8.0A
  • Low on-state resistance (RDS(on)) of 0.08 Ohms maximum at VGS = 10V
  • Available in a TO-220 package
  • Suitable for high voltage applications

Applications:

The STB9NK80Z is suitable for a wide range of applications that require high voltage and high current handling capabilities. Some of the key applications include:

  1. Motor control and drive circuits
  2. Power supplies and converters
  3. Battery charging and management systems
  4. Industrial control and automation systems
  5. High voltage switching and protection circuits

The STB9NK80Z is a reliable and efficient power MOSFET that can be used in a variety of high voltage applications. Its excellent electrical characteristics and performance make it a popular choice for engineers and designers working on power electronics projects.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Minimum Gate Threshold Voltage (V)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB9NK80Z Documents

Download datasheets and manufacturer documentation for STB9NK80Z

Ersa Mult Devices Testing 10/May/2018      
Ersa STB9NK80Z      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STB9NK80Z      
Ersa D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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