STMicroelectronics_STQ1HNK60R-AP

STMicroelectronics
STQ1HNK60R-AP  
Single FETs, MOSFETs

STMicroelectronics
STQ1HNK60R-AP
278-STQ1HNK60R-AP
MOSFET N-CH 600V 400MA TO92-3
In Stock : 4600

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    STQ1HNK60R-AP Description

    STQ1HNK60R-AP Description

    The STQ1HNK60R-AP is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. This MOSFET is part of the SuperMESH™ series, known for its excellent electrical characteristics and reliability. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 400mA at 25°C, the STQ1HNK60R-AP is suitable for a wide range of power electronics applications.

    STQ1HNK60R-AP Features

    • 600V Drain-to-Source Voltage (Vdss): Capable of withstanding high voltages, making it ideal for power electronics applications.
    • 400mA Continuous Drain Current (Id) @ 25°C: Provides ample current handling capability for most power management tasks.
    • 8.5Ω Rds On (Max) @ 500mA, 10V: Offers low on-resistance for efficient power dissipation.
    • 3.7V Vgs(th) (Max) @ 250µA: Ensures reliable switching performance.
    • 156 pF Input Capacitance (Ciss) (Max) @ 25 V: Minimizes capacitive effects, improving high-frequency performance.
    • 10 nC Gate Charge (Qg) (Max) @ 10 V: Reduces switching losses and improves efficiency.
    • ±30V Vgs (Max): Allows for a wide range of gate voltages, increasing design flexibility.
    • 3W Power Dissipation (Max): Capable of handling moderate power levels without overheating.
    • Through Hole Mounting Type: Facilitates easy integration into existing designs.
    • ROHS3 Compliant: Meets environmental standards for safe disposal and recycling.
    • REACH Unaffected: Compliant with the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations.

    STQ1HNK60R-AP Applications

    The STQ1HNK60R-AP is ideal for applications where high voltage and current handling are required, such as:

    • Power Supplies: For voltage regulation and current limiting in power supply designs.
    • Motor Control: In motor drives and control circuits, where high voltage and current capabilities are essential.
    • Automotive Electronics: For use in automotive power management systems, where reliability and performance are critical.
    • Industrial Control Systems: In systems that require robust power management and efficient switching, such as in manufacturing and process control applications.

    Conclusion of STQ1HNK60R-AP

    The STQ1HNK60R-AP from STMicroelectronics is a powerful and versatile N-Channel MOSFET, offering high voltage and current handling capabilities, low on-resistance, and excellent switching performance. Its unique features, such as the SuperMESH™ technology and compliance with environmental regulations, make it a top choice for demanding power electronics applications. With its robust performance and wide range of applications, the STQ1HNK60R-AP is a reliable choice for engineers looking to optimize power management and switching efficiency in their designs.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Length
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STQ1HNK60R-AP Documents

    Download datasheets and manufacturer documentation for STQ1HNK60R-AP

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