STMicroelectronics_STQ1HNK60R-AP
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STMicroelectronics
STQ1HNK60R-AP

278-STQ1HNK60R-AP
600V 1A N-Ch MOSFET, TO-92, 7.3 Ohm Rds(on)
13 Weeks

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Tech Specifications

Package/Case
TO-92
Continuous Drain Current (ID)
400mA
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
4.95mm
Input Capacitance
156pF
Length
4.95mm
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STQ1HNK60R-AP Description

STQ1HNK60R-AP Description

The STQ1HNK60R-AP is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power management and efficient switching. This MOSFET is part of the SuperMESH™ series, known for its excellent electrical characteristics and reliability. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 400mA at 25°C, the STQ1HNK60R-AP is suitable for a wide range of power electronics applications.

STQ1HNK60R-AP Features

  • 600V Drain-to-Source Voltage (Vdss): Capable of withstanding high voltages, making it ideal for power electronics applications.
  • 400mA Continuous Drain Current (Id) @ 25°C: Provides ample current handling capability for most power management tasks.
  • 8.5Ω Rds On (Max) @ 500mA, 10V: Offers low on-resistance for efficient power dissipation.
  • 3.7V Vgs(th) (Max) @ 250µA: Ensures reliable switching performance.
  • 156 pF Input Capacitance (Ciss) (Max) @ 25 V: Minimizes capacitive effects, improving high-frequency performance.
  • 10 nC Gate Charge (Qg) (Max) @ 10 V: Reduces switching losses and improves efficiency.
  • ±30V Vgs (Max): Allows for a wide range of gate voltages, increasing design flexibility.
  • 3W Power Dissipation (Max): Capable of handling moderate power levels without overheating.
  • Through Hole Mounting Type: Facilitates easy integration into existing designs.
  • ROHS3 Compliant: Meets environmental standards for safe disposal and recycling.
  • REACH Unaffected: Compliant with the European Union's Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulations.

STQ1HNK60R-AP Applications

The STQ1HNK60R-AP is ideal for applications where high voltage and current handling are required, such as:

  • Power Supplies: For voltage regulation and current limiting in power supply designs.
  • Motor Control: In motor drives and control circuits, where high voltage and current capabilities are essential.
  • Automotive Electronics: For use in automotive power management systems, where reliability and performance are critical.
  • Industrial Control Systems: In systems that require robust power management and efficient switching, such as in manufacturing and process control applications.

Conclusion of STQ1HNK60R-AP

The STQ1HNK60R-AP from STMicroelectronics is a powerful and versatile N-Channel MOSFET, offering high voltage and current handling capabilities, low on-resistance, and excellent switching performance. Its unique features, such as the SuperMESH™ technology and compliance with environmental regulations, make it a top choice for demanding power electronics applications. With its robust performance and wide range of applications, the STQ1HNK60R-AP is a reliable choice for engineers looking to optimize power management and switching efficiency in their designs.

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Availability (In Stock : 140 )
Quantity Unit Price Ext. Price
1+ $0.67543 $0.68
10+ $0.54000 $5.40
30+ $0.47315 $14.19
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