STMicroelectronics_STD5NK50ZT4

STMicroelectronics
STD5NK50ZT4  
Single FETs, MOSFETs

STMicroelectronics
STD5NK50ZT4
278-STD5NK50ZT4
MOSFET N-CH 500V 4.4A DPAK
In Stock : 2872

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    STD5NK50ZT4 Description

    The STD5NK50ZT4 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

    Description:

    The STD5NK50ZT4 is a high voltage N-channel MOSFET transistor with a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 50A. It features a low on-state resistance (Rds(on)) of 3.5mΩ maximum, which helps to minimize power dissipation and improve efficiency in power electronic applications.

    Features:

    • High voltage N-channel MOSFET transistor
    • Drain-source voltage (Vds) of 500V
    • Continuous drain current (Id) of 50A
    • Low on-state resistance (Rds(on)) of 3.5mΩ maximum
    • Suitable for use in power electronic applications

    Applications:

    The STD5NK50ZT4 is suitable for use in a variety of power electronic applications, including:

    • Motor control
    • Power supplies
    • Energy management systems
    • Industrial control
    • Automotive electronics
    • Renewable energy systems
    • Battery management systems

    Overall, the STD5NK50ZT4 is a high performance MOSFET transistor that offers excellent electrical characteristics and is suitable for use in a wide range of power electronic applications. Its high voltage and current handling capabilities make it a popular choice for designers and engineers working on power electronic systems.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Forward Transconductance - Min
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STD5NK50ZT4 Documents

    Download datasheets and manufacturer documentation for STD5NK50ZT4

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    Shopping Guide

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