STMicroelectronics
STW5NK100Z  
Single FETs, MOSFETs

STMicroelectronics
STW5NK100Z
278-STW5NK100Z
MOSFET N-CH 1000V 3.5A TO247-3
In Stock : 642

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STW5NK100Z Description

STW5NK100Z Description

The STW5NK100Z from STMicroelectronics is a high-voltage N-channel MOSFET designed for demanding power applications. Built using SuperMESH3™ technology, it offers a robust 1000V drain-to-source voltage (Vdss) rating and a continuous drain current (Id) of 3.5A (Tc). With a low on-resistance (Rds(on)) of 3.7Ω @ 1.75A, 10V, it ensures efficient power handling while minimizing conduction losses. The device is housed in a TO-247-3 package, providing excellent thermal performance for high-power dissipation (125W (Tc).

STW5NK100Z Features

  • High Voltage Rating: 1000V Vdss makes it suitable for industrial and automotive applications.
  • SuperMESH3™ Technology: Delivers superior switching performance and reduced conduction losses.
  • Low Gate Charge (Qg): 59 nC @ 10V ensures fast switching and lower drive losses.
  • High Input Capacitance (Ciss): 1154 pF @ 25V for stable operation in high-frequency circuits.
  • Wide Vgs Range: ±30V gate drive tolerance enhances flexibility in circuit design.
  • Robust Thermal Performance: TO-247-3 package with high power dissipation capability.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.

STW5NK100Z Applications

  • Switched-Mode Power Supplies (SMPS): Ideal for high-voltage power conversion stages.
  • Motor Control: Suitable for industrial motor drives and inverters.
  • Lighting Systems: Efficiently powers LED drivers and HID ballasts.
  • Renewable Energy: Used in solar inverters and wind power systems.
  • Automotive Electronics: Reliable performance in electric vehicle (EV) power modules.

Conclusion of STW5NK100Z

The STW5NK100Z stands out as a high-performance 1000V MOSFET, combining low Rds(on), fast switching, and excellent thermal management. Its SuperMESH3™ technology and TO-247-3 package make it a preferred choice for high-power, high-voltage applications where efficiency and reliability are critical. Whether in industrial power systems, automotive electronics, or renewable energy, this MOSFET delivers superior performance and durability.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW5NK100Z Documents

Download datasheets and manufacturer documentation for STW5NK100Z

Ersa IPG/14/8475 16/May/2014      
Ersa STx5NK100Z      
Ersa STW5NK100Z View All Specifications      
Ersa STx5NK100Z      

Shopping Guide

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