STMicroelectronics

STP55NF06  

Single FETs, MOSFETs

STP55NF06 is a high-power, high-voltage N-channel MOSFET manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

Description:

The STP55NF06 is a high-power, high-voltage N-channel MOSFET that features a low on-state resistance (RDS(on)) of 55mΩ (maximum) at a gate-source voltage (VGS) of 10V. It also has a high breakdown voltage (VDS) of 60V. The device is available in a TO-220 package, which is suitable for use in a variety of power electronic applications.

Features:

• Low on-state resistance (RDS(on)) of 55mΩ (maximum) at VGS = 10V
• High breakdown voltage (VDS) of 60V
• High input impedance
• Low gate-drive requirements
• Suitable for use in a wide range of power electronic applications

Applications:

The STP55NF06 is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Power converters
• Battery management systems
• Inverters
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• High-voltage switches

Overall, the STP55NF06 is a high-power, high-voltage N-channel MOSFET that offers excellent performance in a wide range of power electronic applications. Its low on-state resistance and high breakdown voltage make it an ideal choice for applications that require high efficiency and high power handling capabilities.

STP55NF06 Documents

Download datasheets and manufacturer documentation for STP55NF06

Datasheets :

STx55NF06(-1,FP)      

Other Related Documents :

STP55NF06 View All Specifications      

HTML Datasheet :

STx55NF06(-1,FP)