STMicroelectronics_STD13N60M2

STMicroelectronics
STD13N60M2  
Single FETs, MOSFETs

STMicroelectronics
STD13N60M2
278-STD13N60M2
Ersa
STMicroelectronics-STD13N60M2-datasheets-3072384.pdf
MOSFET N-CH 600V 11A DPAK
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    STD13N60M2 Description

    The STD13N60M2 is a high-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

    Description:

    The STD13N60M2 is a surface-mount MOSFET with a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 13.6A at 25°C. It features a low on-state resistance (Rds(on)) of 0.65 ohms, which helps to minimize power dissipation and improve efficiency.

    Features:

    1. High-power N-channel MOSFET
    2. Maximum drain-source voltage (Vds) of 600V
    3. Continuous drain current (Id) of 13.6A at 25°C
    4. Low on-state resistance (Rds(on)) of 0.65 ohms
    5. Surface-mount package for easy integration into printed circuit boards (PCBs)
    6. Suitable for use in a wide range of power electronic applications

    Applications:

    1. Motor control: The STD13N60M2 can be used in motor control applications, such as in industrial automation systems, HVAC systems, and robotics.
    2. Power supplies: This MOSFET is suitable for use in power supply circuits, including switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Automotive systems: The STD13N60M2 can be used in various automotive applications, such as in electric power steering (EPS) systems, battery management systems, and electric vehicle (EV) charging systems.
    4. Lighting systems: This MOSFET can be used in LED lighting systems, where it helps to control the current flow and improve overall efficiency.
    5. Renewable energy systems: The STD13N60M2 can be used in solar power systems and wind energy systems to control the power flow and protect the system from overcurrent conditions.

    In summary, the STD13N60M2 is a high-power N-channel MOSFET that offers excellent performance in a variety of power electronic applications. Its low on-state resistance and high voltage and current ratings make it suitable for use in motor control, power supplies, automotive systems, lighting systems, and renewable energy systems.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD13N60M2 Documents

    Download datasheets and manufacturer documentation for STD13N60M2

    Ersa ST(B,D)13N60M2      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa ST(B,D)13N60M2      
    Ersa New Lead Frame Design 17/Mar/2023      

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