The STB19NF20 is a high-performance MOSFET N-CH 200V 15A D2PAK from STMicroelectronics, a leading manufacturer in the electronics industry. This Single FET is designed to deliver exceptional performance and reliability in various applications. With a maximum drain-to-source voltage of 200V and a continuous drain current of 15A at 25°C, the STB19NF20 is ideal for high-power applications. Its low on-resistance of 160mOhm at 7.5A and 10V ensures efficient power dissipation, making it suitable for demanding environments.
Input Capacitance (Ciss): 800 pF @ 25 V - Minimizes input capacitance for faster switching and reduced power consumption.
Gate Charge (Qg): 24 nC @ 10 V - Reduces switching losses and improves efficiency.
Vgs (Max): ±20V - Offers a wide gate voltage range for compatibility with various gate drivers.
Rds On (Max): 160mOhm @ 7.5A, 10V - Ensures low on-resistance for efficient power dissipation.
Vgs(th) (Max): 4V @ 250µA - Provides a low threshold voltage for easy gate drive.
Series: MESH OVERLAY™ - Offers unique performance benefits and advantages over similar models.
Mounting Type: Surface Mount - Facilitates easy integration into surface-mount applications.
RoHS Status: ROHS3 Compliant - Ensures environmental compliance and sustainability.
Moisture Sensitivity Level (MSL): 1 (Unlimited) - Allows for flexible storage and handling conditions.
STB19NF20 Applications
The STB19NF20 is ideal for various high-power applications, including:
Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, ensuring efficient power conversion and distribution.
Motor Controls: The STB19NF20's low on-resistance and high current capabilities make it an excellent choice for motor control applications, providing precise control and improved efficiency.
Industrial Automation: Its robust performance and reliability make it suitable for demanding industrial automation applications, such as robotics and control systems.
Renewable Energy: The STB19NF20 can be used in solar inverters and wind energy systems, where high voltage and current ratings are critical for efficient energy conversion.
Conclusion of STB19NF20
The STB19NF20 from STMicroelectronics is a high-performance MOSFET N-CH 200V 15A D2PAK that offers exceptional technical specifications and performance benefits. Its unique features, such as low on-resistance, low input capacitance, and high gate voltage range, make it an ideal choice for high-power applications in power supplies, motor controls, industrial automation, and renewable energy systems. With its RoHS compliance and moisture sensitivity level of 1, the STB19NF20 ensures environmental sustainability and flexible storage conditions, making it a reliable and efficient solution for demanding applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STB19NF20 Documents
Download datasheets and manufacturer documentation for STB19NF20
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service