STMicroelectronics
STF11NM80
Single FETs, MOSFETs
STF11NM80
278-STF11NM80
MOSFET N-CH 800V 11A TO220FP
In Stock : 1061
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STF11NM80 Description
STF11NM80 is a high-power, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including automotive, industrial, and power electronics.
Description:
The STF11NM80 is an N-channel MOSFET with a continuous drain current (Id) of 110A and a drain-to-source voltage (Vdss) of 80V. It is available in a Power-FLAT 5x6 package, which is suitable for high-power applications.
Features:
- High-power and high-voltage capabilities: The STF11NM80 is designed to handle high power and voltage levels, making it suitable for use in demanding applications.
- Low on-state resistance (RDS(on)): The STF11NM80 has a low on-state resistance, which helps to minimize power losses and improve efficiency.
- High switching speed: The MOSFET has a fast switching speed, which allows it to operate efficiently in high-frequency applications.
- Integrated body diode: The STF11NM80 features an integrated body diode, which provides efficient bidirectional current flow during switching.
- Avalanche energy capable: The MOSFET is designed to withstand high energy during avalanche conditions, making it suitable for use in applications with high energy transients.
Applications:
- Automotive: The STF11NM80 can be used in various automotive applications, such as electric power steering, air conditioning systems, and engine management systems.
- Industrial: The MOSFET is suitable for use in industrial applications, including motor control, power supplies, and battery management systems.
- Power electronics: The STF11NM80 can be used in power electronics applications, such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems.
- Motor control: The MOSFET is suitable for use in motor control applications, including brushless DC (BLDC) motors and AC induction motors.
- Battery protection: The STF11NM80 can be used in battery protection circuits to ensure safe and efficient operation of battery systems.
In summary, the STF11NM80 is a high-power, high-voltage N-channel MOSFET that offers a combination of high current handling, low on-state resistance, and fast switching capabilities. It is suitable for a wide range of applications, including automotive, industrial, and power electronics, making it a versatile choice for designers working on high-power systems.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STF11NM80 Documents
Download datasheets and manufacturer documentation for STF11NM80
Product / Process Change Notification (PDF) Product Change Notification (PDF) Product Change Notification 2024-04-02 (PDF) Related Parts
Shopping Guide
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