STMicroelectronics_STB20NM50T4

STMicroelectronics
STB20NM50T4  
Single FETs, MOSFETs

STMicroelectronics
STB20NM50T4
278-STB20NM50T4
MOSFET N-CH 550V 20A D2PAK
In Stock : 1976

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STB20NM50T4 Description

STB20NM50T4 Description

The STB20NM50T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. It features a D2PAK package and is part of the MDmesh™ series, offering superior thermal performance and reliability. With a drain-to-source voltage (Vdss) of 550V and a continuous drain current (Id) of 20A at 25°C, the STB20NM50T4 is ideal for demanding power electronic applications.

STB20NM50T4 Features

  • High Voltage and Current Handling: The STB20NM50T4 can handle a maximum drain-to-source voltage of 550V and a continuous drain current of 20A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 250mOhm at 10A and 10V, the STB20NM50T4 offers low conduction losses, improving efficiency in power conversion systems.
  • Fast Switching Speed: The device has a low gate charge (Qg) of 56nC at 10V and a threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching and reducing switching losses.
  • Robust Thermal Performance: The D2PAK package provides excellent thermal dissipation, ensuring reliable operation in high-power applications.
  • Compliance and Environmental: The STB20NM50T4 is REACH unaffected and RoHS3 compliant, making it suitable for environmentally conscious designs.

STB20NM50T4 Applications

The STB20NM50T4 is ideal for a wide range of power electronic applications, including:

  1. Power Supplies: Its high voltage and current ratings make it suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and DC-DC converters.
  2. Motor Drives: The device's low on-resistance and fast switching capabilities are beneficial in motor drive applications, improving efficiency and reducing losses.
  3. Industrial Control: The STB20NM50T4 can be used in industrial control systems, such as motor control and power distribution, where high voltage and current handling are required.
  4. Automotive Applications: The device's robustness and compliance with environmental regulations make it suitable for automotive applications, such as electric vehicle charging systems and power management.

Conclusion of STB20NM50T4

The STB20NM50T4 is a versatile and high-performance N-Channel MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its robust thermal performance and compliance with environmental regulations make it an ideal choice for a wide range of power electronic applications, including power supplies, motor drives, industrial control, and automotive systems. With its unique features and advantages over similar models, the STB20NM50T4 is a reliable and efficient solution for demanding power electronic designs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Forward Transconductance - Min
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STB20NM50T4 Documents

Download datasheets and manufacturer documentation for STB20NM50T4

Ersa STB20NM50(-1), STP20NM50(FP)      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB20NM50 View All Specifications      
Ersa STB20NM50(-1), STP20NM50(FP)      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

Shopping Guide

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