STMicroelectronics_STD3N62K3

STMicroelectronics
STD3N62K3  
Single FETs, MOSFETs

STMicroelectronics
STD3N62K3
278-STD3N62K3
Ersa
STMicroelectronics-STD3N62K3-datasheets-1987226.pdf
MOSFET N-CH 620V 2.7A DPAK
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STD3N62K3 Description

STD3N62K3 Description

The STD3N62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.7A at 25°C, this device is ideal for use in power electronics and motor control applications. The STD3N62K3 features a low on-resistance (Rds On) of 2.5Ω at 1.4A and 10V, ensuring efficient power dissipation and minimizing power losses.

STD3N62K3 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and fast switching capabilities.
  • Input Capacitance (Ciss): 385 pF @ 25 V - Minimizes input capacitance, reducing power consumption and improving performance.
  • Gate Charge (Qg): 13 nC @ 10 V - Minimizes gate charge, reducing switching losses and improving efficiency.
  • Vgs (Max): ±30V - Allows for a wide range of gate voltages, providing flexibility in circuit design.
  • Operating Temperature: 150°C (TJ) - Ensures reliable operation in high-temperature environments.
  • RoHS Status: ROHS3 Compliant - Meets environmental regulations and is suitable for use in green electronics.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Allows for unlimited storage time before reflow soldering, simplifying manufacturing processes.
  • Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) processes.

STD3N62K3 Applications

The STD3N62K3 is ideal for a variety of high-voltage and high-current applications, including:

  1. Power Electronics: Due to its high Vdss and Id ratings, the STD3N62K3 is well-suited for use in power electronics, such as power supplies and converters.
  2. Motor Control: The low Rds On and high Id capabilities make this device ideal for motor control applications, where efficient power dissipation and fast switching are critical.
  3. Automotive Electronics: The high operating temperature and robust performance of the STD3N62K3 make it suitable for use in automotive electronics, such as electric vehicle (EV) charging systems and power management.
  4. Industrial Control: The STD3N62K3's high voltage and current ratings make it an excellent choice for industrial control applications, such as motor drives and power distribution systems.

Conclusion of STD3N62K3

The STD3N62K3 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a unique combination of high voltage, current handling capabilities, and low on-resistance. Its robust performance, low power consumption, and compliance with environmental regulations make it an ideal choice for a wide range of applications in power electronics, motor control, automotive electronics, and industrial control. With its advanced features and superior performance, the STD3N62K3 stands out as a reliable and efficient solution for demanding applications in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD3N62K3 Documents

Download datasheets and manufacturer documentation for STD3N62K3

Ersa STx3N62K3      
Ersa STD3N62K3 View All Specifications      
Ersa STx3N62K3      

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