STMicroelectronics_STB30N80K5

STMicroelectronics
STB30N80K5  
Single FETs, MOSFETs

STMicroelectronics
STB30N80K5
278-STB30N80K5
Ersa
STMicroelectronics-STB30N80K5-datasheets-7887860.pdf
MOSFET N-CHANNEL 800V 24A D2PAK
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STB30N80K5 Description

STMicroelectronics' STB30N80K5 is a high-power, high-voltage N-channel MOSFET transistor designed for use in a variety of applications. Here is a brief description of the model, its features, and potential applications:

Description:

The STB30N80K5 is an N-channel enhancement mode field effect transistor (MOSFET) with a continuous drain current (Id) of 30A and a drain-source voltage (Vdss) of 800V. It is available in a TO-220AC package, which is suitable for high-power applications.

Features:

  1. High Power: With a continuous drain current of 30A, the STB30N80K5 is designed to handle high-power applications.
  2. High Voltage: The drain-source voltage (Vdss) of 800V allows the transistor to operate in high-voltage environments.
  3. N-Channel Enhancement Mode: The STB30N80K5 is an N-channel MOSFET, which means it is designed to switch on when a positive voltage is applied to the gate terminal.
  4. Low On-State Resistance (RDS(on)): The low on-state resistance of the transistor allows for efficient power transfer and minimal power loss during operation.
  5. High Switching Speed: The STB30N80K5 is designed for fast switching applications, making it suitable for use in high-frequency circuits.

Applications:

  1. Motor Control: The high power and voltage ratings make the STB30N80K5 suitable for use in motor control applications, such as in industrial machinery and automotive systems.
  2. Power Supplies: The transistor can be used in power supply circuits, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Inverters: The STB30N80K5 can be used in inverter circuits for converting DC power to AC power, such as in renewable energy systems and power inverters for electric vehicles.
  4. Battery Management Systems: The high-power and voltage ratings make the STB30N80K5 suitable for use in battery management systems for electric vehicles and energy storage systems.
  5. Industrial Automation: The transistor can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs).

Please note that this is a general overview of the STB30N80K5 transistor, and specific design considerations and requirements should be taken into account when selecting and using this component in a particular application. Always refer to the manufacturer's datasheet and consult with an engineer or technician for specific design requirements.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Mounting Style
Unit Weight
Vgs - Gate-Source Voltage
Id - Continuous Drain Current
Transistor Polarity
RoHS
Qg - Gate Charge
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Tradename
Number of Channels
Maximum Operating Temperature
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
Rds On - Drain-Source Resistance

STB30N80K5 Documents

Download datasheets and manufacturer documentation for STB30N80K5

Ersa STB30N80K5      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      

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