STMicroelectronics_STB40NF10LT4

STMicroelectronics
STB40NF10LT4  
Single FETs, MOSFETs

STMicroelectronics
STB40NF10LT4
278-STB40NF10LT4
MOSFET N-CH 100V 40A D2PAK
In Stock : 1937

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STB40NF10LT4 Description

STB40NF10LT4 is a high-power N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and power converters.

Description:

The STB40NF10LT4 is a high-power N-channel MOSFET transistor that features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 40A. It is available in a TO-220L package, which is suitable for use in a variety of power electronic applications.

Features:

  • N-channel MOSFET transistor
  • Maximum drain-source voltage (VDS) of 100V
  • Continuous drain current (ID) of 40A
  • Low on-state resistance (RDS(on))
  • High switching speed
  • Low gate charge
  • Suitable for use in a wide range of power electronic applications

Applications:

  • Motor control
  • Power supplies
  • Power converters
  • Battery management systems
  • Inverters
  • Switch mode power supplies (SMPS)
  • Industrial control systems

The STB40NF10LT4 is a high-power MOSFET transistor that is designed for use in a variety of power electronic applications. Its high current handling capability and low on-state resistance make it an excellent choice for applications that require high efficiency and high power density. Its high switching speed and low gate charge also make it well-suited for use in high-frequency applications. Overall, the STB40NF10LT4 is a versatile and reliable MOSFET transistor that can be used in a wide range of power electronic applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB40NF10LT4 Documents

Download datasheets and manufacturer documentation for STB40NF10LT4

Ersa Mult Devices 27/Feb/2019      
Ersa STB40NF10L      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB40NF10L View All Specifications      
Ersa STB40NF10L      
Ersa IPG-PWR/14/8422 11/Apr/2014       D2PAK Lead Modification 04/Oct/2013      

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